High aspect ratio anisotropic silicon etching for x-ray phase contrast imaging grating fabrication
Journal Article
·
· Materials Science in Semiconductor Processing
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Lab based x-ray phase contrast imaging (XPCI) systems have historically focused on medical applications, but there is growing interest in material science applications for non-destructive analysis of low density materials. Extending this imaging technique to higher density materials or larger samples requires higher aspect ratio gratings, to allow the use of a higher energy x-ray source. Here, we demonstrate the use of anisotropic silicon (Si) etching in potassium hydroxide (KOH), to achieve extremely high aspect ratio gratings. This method has been shown to be effective in fabricating deep, uniform gratings by taking advantage of the etch selectivity of differing crystalline planes of silicon. Our work has introduced a method for determining Si crystalline plane directions, specific to (110) Si wafers, enabling high alignment accuracy of the etch mask to these crystalline planes.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000; NA0003525
- OSTI ID:
- 1524206
- Alternate ID(s):
- OSTI ID: 1780136
- Report Number(s):
- SAND--2018-7120J; 665381
- Journal Information:
- Materials Science in Semiconductor Processing, Journal Name: Materials Science in Semiconductor Processing Journal Issue: C Vol. 92; ISSN 1369-8001
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Tungsten nanoparticles-based x-ray absorption gratings for cascaded Talbot–Lau interferometers
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journal | September 2019 |
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