Al0.45Ga0.55N/Al0.30Ga0.70N High Electron Mobility Transistors with Schottky Gates and Small Subthreshold Slope Factor.
Conference
·
OSTI ID:1513616
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1513616
- Report Number(s):
- SAND2017-6790C; 654849
- Country of Publication:
- United States
- Language:
- English
Similar Records
Enhancement-mode Al0.45Ga0.55N/Al0.3Ga0.7N High Electron Mobility Transistor with p-Al0.3Ga0.7N Gate.
Visible and Solar-Blind Photodetectors Using AlGaN High Electron Mobility Transistors with Nanodot-Based Floating Gate.
GaN High Electron Mobility Transistor Degradation:Effect of RF Stress.
Conference
·
Wed Aug 01 00:00:00 EDT 2018
·
OSTI ID:1582197
Visible and Solar-Blind Photodetectors Using AlGaN High Electron Mobility Transistors with Nanodot-Based Floating Gate.
Conference
·
Mon Jul 01 00:00:00 EDT 2019
·
OSTI ID:1641076
GaN High Electron Mobility Transistor Degradation:Effect of RF Stress.
Conference
·
Sat Sep 01 00:00:00 EDT 2012
·
OSTI ID:1116380