Approach to Defect-Free Lifetime and High Electron Density in CdTe

Swain, S. K.; Duenow, J. N.; Johnston, S. W.; Amarasinghe, M.; McCoy, J. J.; Metzger, W. K.; Lynn, K. G.

doi:10.1007/s11664-019-07190-x

Title: Approach to Defect-Free Lifetime and High Electron Density in CdTe

Journal Article · Thu Apr 11 00:00:00 EDT 2019 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/s11664-019-07190-x· OSTI ID:1512683

Swain, S. K. ^[1]; Duenow, J. N. ^[2]; Johnston, S. W. ^[2]; Amarasinghe, M. ^[2]; McCoy, J. J. ^[1]; Metzger, W. K. ^[2]; Lynn, K. G. ^[1]

Washington State Univ., Pullman, WA (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

Achieving simultaneously high carrier density and lifetime is crucial to II-VI semiconductor-based applications such as photovoltaics and infrared detectors; yet, it is a challenging task. In this work, high purity CdTe single crystals doped with indium (In) were grown by vertical Bridgman melt growth under carefully controlled stoichiometry. Two-photon excitation time-resolved photoluminescence was employed to measure bulk recombination lifetime by eliminating surface recombination effects. By adjusting stoichiometry with post growth annealing, high-net free carrier density approaching 10¹⁸ cm^-3 was attained simultaneously with lifetime approaching the radiative limit by suppressing non-radiative recombination centers.

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Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States); Washington State Univ., Pullman, WA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: AC36-08GO28308; EE0007537; EE0008548

OSTI ID:: 1512683

Alternate ID(s):: OSTI ID: 1644037; OSTI ID: 1741033

Report Number(s):: NREL/JA-5K00-73893

Journal Information:: Journal of Electronic Materials, Vol. 48, Issue 7; ISSN 0361-5235

Publisher:: SpringerCopyright Statement

Country of Publication:: United States

Language:: English

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n-type CdTe
time resolved photoluminescence
carrier density
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Title: Approach to Defect-Free Lifetime and High Electron Density in CdTe

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References (25)

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