Spectroscopic and Microscopic Defect and Carrier-Lifetime Analysis in Cadmium Telluride
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- First Solar, Inc., Perrysburg, OH (United States)
Using experiments and theory, we analyze 'carrier-lifetime-killer' semiconductor bulk defects in CdTe. We can estimate the concentration of tellurium antisite (Te Cd ) recombination centers in undoped CdTe from the kinetic modeling of injection-dependent photoluminescence (PL) lifetimes. For the Cd-rich stoichiometry, the concentration of lifetime-limiting [Te Cd] is =1013 cm-3. For the Te-rich stoichiometry, we find a smaller hole-capture rate constant than predicted by theory, which could be because of Te Cd association with the Te interstitials. We also compare PL emission spectra, carrier lifetimes, and radiative efficiencies for Cu, P, and As doping and analyze the microscopic distribution of carrier lifetimes in As-doped single-crystal CdTe. In all the cases examined here, point defects are the dominant bulk recombination centers. Carrier lifetimes are the longest in undoped CdTe, but radiative efficiencies are the highest with group-V doping.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- Grant/Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1478183
- Report Number(s):
- NREL/JA-5900-71484
- Journal Information:
- IEEE Journal of Photovoltaics, Vol. 8, Issue 6; ISSN 2156-3381
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Radiative Efficiency and Charge‐Carrier Lifetimes and Diffusion Length in Polycrystalline CdSeTe Heterostructures
|
journal | December 2019 |
Radiative Efficiency and Charge‐Carrier Lifetimes and Diffusion Length in Polycrystalline CdSeTe Heterostructures
|
journal | January 2020 |
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