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Title: Large-Area Material and Junction Damage in c–Si Solar Cells by Potential-Induced Degradation

Journal Article · · Solar RRL
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  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
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This paper reports a new potential-induced degradation (PID) mechanism for crystalline silicon (c-Si), where Na diffuses everywhere and causes large-area material and junction degradation with point defects. Multiple characterization techniques are combined - Kelvin probe force microscopy, electron-beam induced current, dark lock-in thermography, transmission electron microscopy, time-of-flight secondary-ion mass spectrometry, and microwave photoconductance decay - as well as density functional theory (DFT) calculations. These characterization techniques and theoretical calculations are complementary in various aspects of a material's chemical, structural, electrical, and optoelectrical nature, as well as in atomic, nanometer, micrometer, millimeter, and cell and module scales. All results point consistently to a new discovery: substantial large-area deterioration of materials and junctions play a major role in c-Si PID (in addition to the previously reported local shunting defect caused by Na diffusion to planar defects). Furthermore, this new finding reveals a key PID component and leads to a new strategy for tailoring c-Si photovoltaics to ultimately resolve the PID issue.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1509669
Report Number(s):
NREL/JA-5K00-72059
Journal Information:
Solar RRL, Vol. 3, Issue 4; ISSN 2367-198X
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 8 works
Citation information provided by
Web of Science

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Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
fundamental mechanisms
large-area damage
multiple characterization
potential-induced degradation
Si solar cells