Large-Area Material and Junction Damage in c-Si Solar Cells by Potential-Induced Degradation

Conference · Wed Feb 27 04:00:00 EST 2019

DOI:https://doi.org/10.1109/PVSC.2018.8548169· OSTI ID:1497990

Xiao, Chuanxiao ^[1]; Jiang, Chun Sheng ^[1]; Harvey, Steven P ^[1]; Sulas, Dana ^[1]; Chen, Xihan ^[1]; Liu, Jun ^[1]; Pan, Jie ^[1]; Moutinho, Helio R ^[1]; Norman, Andrew ^[1]; Hacke, Peter L ^[1]; Johnston, Steven ^[1]; Al-Jassim, Mowafak M ^[1]

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1. National Renewable Energy Laboratory (NREL), Golden, CO (United States)

A new potential-induced degradation (PID) mechanism for c-Si is reported. Multiple characterization techniques in various aspects of a material's chemical, structural, electrical, and optoelectrical nature, as well as in atomic, nanometer, micrometer, millimeter, and cell and module scales, are combined. All results point consistently to a new discovery: substantial large-area deterioration of materials and junctions plays a major role.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 1497990
• Report Number(s): NREL/PO-5K00-73379
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
DLIT
EBIC
KPFM
PV
c-Si Solar Cells
dark lock-in thermography
electron-beam induced current
kelvin probe force microscopy
microwave photoconductance decay
photovoltaic
solar
time-of-flight secondary-ion mass spectrometry
transmission electron microscopy