Methods of forming silicon carbide by spark plasma sintering
Patent
·
OSTI ID:1506948
A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50.degree. C./min and about 200.degree. C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.
- Research Organization:
- Idaho National Laboratory (INL), Idaho Falls, ID (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC07-05ID14517
- Assignee:
- Battelle Energy Alliance, LLC (Idaho Falls, ID)
- Patent Number(s):
- 10,207,956
- Application Number:
- 15/195,313
- OSTI ID:
- 1506948
- Country of Publication:
- United States
- Language:
- English
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Electric Current Activation of Sintering: A Review of the Pulsed Electric Current Sintering Process: Electric Current Activation of Sintering
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