skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Methods of forming silicon carbide by spark plasma sintering

Abstract

A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50.degree. C./min and about 200.degree. C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.

Inventors:
; ; ;
Publication Date:
Research Org.:
Idaho National Lab. (INL), Idaho Falls, ID (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1506948
Patent Number(s):
10,207,956
Application Number:
15/195,313
Assignee:
Battelle Energy Alliance, LLC (Idaho Falls, ID)
DOE Contract Number:  
AC07-05ID14517
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Jun 28
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Chu, Henry S., O'Brien, Robert C., Cook, Steven K., and Bakas, Michael P. Methods of forming silicon carbide by spark plasma sintering. United States: N. p., 2019. Web.
Chu, Henry S., O'Brien, Robert C., Cook, Steven K., & Bakas, Michael P. Methods of forming silicon carbide by spark plasma sintering. United States.
Chu, Henry S., O'Brien, Robert C., Cook, Steven K., and Bakas, Michael P. Tue . "Methods of forming silicon carbide by spark plasma sintering". United States. https://www.osti.gov/servlets/purl/1506948.
@article{osti_1506948,
title = {Methods of forming silicon carbide by spark plasma sintering},
author = {Chu, Henry S. and O'Brien, Robert C. and Cook, Steven K. and Bakas, Michael P.},
abstractNote = {A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50.degree. C./min and about 200.degree. C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.},
doi = {},
url = {https://www.osti.gov/biblio/1506948}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {2}
}

Patent:

Save / Share: