Methods of forming silicon carbide by spark plasma sintering

Title: Methods of forming silicon carbide by spark plasma sintering

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Abstract

A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50.degree. C./min and about 200.degree. C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.

Inventors:: Chu, Henry S.; O'Brien, Robert C.; Cook, Steven K.; Bakas, Michael P.

Publication Date:: 2019-02-19

Research Org.:: Idaho National Lab. (INL), Idaho Falls, ID (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1506948

Patent Number(s):: 10,207,956

Application Number:: 15/195,313

Assignee:: Battelle Energy Alliance, LLC (Idaho Falls, ID)

DOE Contract Number:: AC07-05ID14517

Resource Type:: Patent

Resource Relation:: Patent File Date: 2016 Jun 28

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Chu, Henry S., O'Brien, Robert C., Cook, Steven K., and Bakas, Michael P. Methods of forming silicon carbide by spark plasma sintering.  United States: N. p., 2019. 
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                    Chu, Henry S., O'Brien, Robert C., Cook, Steven K., & Bakas, Michael P. Methods of forming silicon carbide by spark plasma sintering.  United States.

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                    Chu, Henry S., O'Brien, Robert C., Cook, Steven K., and Bakas, Michael P. Tue .  
        "Methods of forming silicon carbide by spark plasma sintering".  United States.  https://www.osti.gov/servlets/purl/1506948.

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@article{osti_1506948,

  title        = {Methods of forming silicon carbide by spark plasma sintering},

  author       = {Chu, Henry S. and O'Brien, Robert C. and Cook, Steven K. and Bakas, Michael P.},

  abstractNote = {A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50.degree. C./min and about 200.degree. C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/1506948},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2019},

  month        = {2}

}

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