Irreversible metal-insulator transition in thin film VO2 induced by soft X-ray irradiation

Singh, V. R.; Jovic, V.; Valmianski, I.; Ramirez, J. G.; Lamoureux, B.; Schuller, Ivan K.; Smith, K. E.

doi:10.1063/1.5012940

Irreversible metal-insulator transition in thin film VO₂ induced by soft X-ray irradiation

Journal Article · Sun Dec 10 23:00:00 EST 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5012940· OSTI ID:1505563

^[1]; Jovic, V. ^[2]; Valmianski, I. ^[3]; ^[4]; Lamoureux, B. ^[5]; Schuller, Ivan K. ^[3]; Smith, K. E. ^[6]

Boston Univ., MA (United States); Central Univ. of Kashmir (India); Department of Physics, Boston University, Boston, Massachusetts 02215, USA; Department of Physics, Central University of Kashmir, Srinagar, Jammu And Kashmir 190004, India
Univ. of Auckland (New Zealand)
Univ. of California, San Diego, CA (United States)
Univ. of California, San Diego, CA (United States); Univ. de los Andes, Bogota (Columbia)
Boston Univ., MA (United States)
Boston Univ., MA (United States); Univ. of Auckland (New Zealand)

In this study, we show the ability of soft x-ray irradiation to induce room temperature metal-insulator transitions (MITs) in VO₂ thin films grown on R-plane sapphire. The ability of soft x-rays to induce MIT in VO₂ thin films is confirmed by photoemission spectroscopy and soft x-ray spectroscopy measurements. When irradiation was discontinued, the systems do not return to the insulating phase. Analysis of valence band photoemission spectra revealed that the density of states (DOSs) of the V 3d band increased with irradiation time, while the DOS of the O 2p band decreased. We use these results to propose a model in which the MIT is driven by oxygen desorption from thin films during irradiation. As a strongly correlated transition metal oxide, VO₂ is an interesting and valuable material both for expanding our understanding of fundamental physics and for potential applications due to its particular metal-insulator transition (MIT). At 340 K, the resistance of bulk VO₂ exhibits a large jump (up to 5 orders of magnitude), accompanied by first order crystal phase transition from a room temperature monoclinic phase to a high temperature tetragonal phase.1,2 The origin of the MIT has been widely discussed since electron–phonon interaction (Peierls type) or electron–electron interaction (Mott–Hubbard type) could play a key role in inducing the occurrence of the MIT.3–7 Furthermore, these characteristics of the VO₂.

View Accepted Manuscript (DOE)

Research Organization:: Boston Univ., MA (United States); Univ. of California, San Diego, CA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: FG02-98ER45680

OSTI ID:: 1505563

Alternate ID(s):: OSTI ID: 1413073

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 111; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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