Low magnetic damping and large negative anisotropic magnetoresistance in half-metallic Co2-xMn1+xSi Heusler alloy films grown by molecular beam epitaxy

Oogane, Mikihiko; McFadden, Anthony P.; Fukuda, Kenji; Tsunoda, Masakiyo; Ando, Yasuo; Palmstrøm, Chris J.

doi:10.1063/1.5030341

Title: Low magnetic damping and large negative anisotropic magnetoresistance in half-metallic Co_2-xMn_1+xSi Heusler alloy films grown by molecular beam epitaxy

Journal Article · Wed Jun 27 00:00:00 EDT 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5030341· OSTI ID:1503633

Oogane, Mikihiko ^[1]; McFadden, Anthony P. ^[2];

^[1]; Tsunoda, Masakiyo ^[1]; Ando, Yasuo ^[1];

^[2]

Tohoku Univ., Sendai (Japan)
Univ. of California, Santa Barbara, CA (United States)

Co_2-xMn_1+xSi films with various composition x were epitaxially grown using molecular beam epitaxy (MBE). High crystallinity and atomic ordering in the prepared Co_2-xMn_1+xSi films were observed, and their magnetic damping and anisotropic magnetoresistance (AMR) effect were systematically investigated. An ultra-low magnetic damping constant of 0.0007 was obtained in the Co_2-xMn_1+xSi film with a valence electron number (NV) of about 29.0. Additionally, a relatively large negative AMR effect was observed in the Co_2-xMn_1+xSi films that had a N_V of about 29.0. This low damping and the large negative AMR effect indicate that epitaxial Co_2-xMn_1+xSi films with high atomic ordering grown by MBE possess a high-spin polarization. Half-metals have potential for enhancing the performance of various kinds of spintronic devices, such as magnetic sensors and magnetic random access memory (MRAM) devices, because the conduction electrons are completely spin-polarized due to the Fermi level (EF) being in the energy gap of one of the spin channels. Among the half-metals, Co-based Heusler alloys are expected to show half-metallic properties at room temperature due to their high Curie temperature. In the past decade, high tunnel magnetoresistance (TMR) and current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) have been experimentally demonstrated using Co-based Heusler alloy electrodes. Furthermore, further improvement of their half-metallic properties is required to obtain improved performance in magnetic tunnel junctions (MTJs) and CPP-GMR devices.

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Research Organization:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: SC0014388

OSTI ID:: 1503633

Alternate ID(s):: OSTI ID: 1457492

Journal Information:: Applied Physics Letters, Vol. 112, Issue 26; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 17 works

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Giant anisotropic magnetoresistance and planar Hall effect in Sr _0.06 Bi ₂ Se ₃ Huang, Hui; Gu, Juanjuan; Ji, Ping Applied Physics Letters, Vol. 113, Issue 22 https://doi.org/10.1063/1.5063689	journal	November 2018
Polycrystalline Co ₂ Mn-based Heusler thin films with high spin polarization and low magnetic damping Guillemard, C.; Petit-Watelot, S.; Rojas-Sánchez, J. -C. Applied Physics Letters, Vol. 115, Issue 17 https://doi.org/10.1063/1.5121614	journal	October 2019

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Title: Low magnetic damping and large negative anisotropic magnetoresistance in half-metallic Co2-xMn1+xSi Heusler alloy films grown by molecular beam epitaxy

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