Room-Temperature Ferromagnetism in Ion-Implanted Co-Doped TiO₂(110) Rutile

Journal Article · Mon May 31 04:00:00 EDT 2004 · Applied Physics Letters, 84(22):4466-4468

DOI:https://doi.org/10.1063/1.1753652· OSTI ID:15020915

Shutthanandan, V.; Thevuthasan, Suntharampillai; Heald, Steve M.; Droubay, Timothy C.; Engelhard, Mark H.; Kaspar, Tiffany C.; McCready, David E.; Saraf, Laxmikant V.; Chambers, Scott A.; Mun, B. S.; Hamdan, N. M.; Nachimuthu, Ponnusamy; Taylor, B.; Sears, R.; Sinkovic, Boris

Interest in diluted magnetic semiconductros (DMS) is growing rapidly within the emerging field of spintronics. For example, the ability to efficiently inject spin-polarized carriers into nonmagnetic semiconductor heterostructures creates new and exciting possibilities for utilizing DMS materials in spin-based devices. Several III-V and II-VI semiconductor materials doped with magnetic transition metal elements have been explored. Although these materials show promising behavior in some cases, most exhibit Curie temperatures of ~170 K or less. It has recently been shown that certain oxide semiconductors doped with magnetic transition elements show room-temperature ferromagnetism.

• Research Organization: Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 15020915
• Report Number(s): PNNL-SA-43204; 6292; KC0302010
• Journal Information: Applied Physics Letters, 84(22):4466-4468, Journal Name: Applied Physics Letters, 84(22):4466-4468 Journal Issue: 22 Vol. 84
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CURIE POINT
Environmental Molecular Sciences Laboratory
FERROMAGNETISM
MAGNETIC SEMICONDUCTORS
OXIDES
RUTILE
SEMICONDUCTOR MATERIALS
TRANSITION ELEMENTS