New Materials for Spintronics
One of the critical materials needs for the development of spin electronics is diluted magnetic semiconductors (DMS) which retain their ferromagnetism at and above room temperature. Spin polarization in DMS materials leads to the possibility of spin-polarized current injection into nonmagnetic semiconductor heterostructures. Such transport is of critical importance in the development of devices that utilize spin (e.g. spin-LEDs and spin-FETs). New magnetically-doped semiconducting oxides that show promise because of Curie points which exceed room temperature are currently being investigated in our lab and elsewhere. However, the detailed materials properties and mechanism(s) of magnetism in these systems have been elusive. In this talk, I will present recent results from our laboratory focused on the MBE synthesis and properties of these ferromagnetic oxide semiconductors. This work was funded by the PNNL Nanoscience and Technology Initiative, the US Department of Energy, Office of Science, Office of Basic Energy Sciences, Division of Materials Science and Engineering Physics, and the DARPA Spins in Semiconductors (SPINS) Initiative.
- Research Organization:
- Pacific Northwest National Lab., Richland, WA (US), Environmental Molecular Sciences Laboratory (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC06-76RL01830
- OSTI ID:
- 15007692
- Report Number(s):
- PNNL-SA-41185; 6292; KC0201050
- Journal Information:
- MRS Bulletin, Journal Name: MRS Bulletin Journal Issue: 10 Vol. 28
- Country of Publication:
- United States
- Language:
- English
Similar Records
Room-Temperature Ferromagnetism in Ion-Implanted Co-Doped TiO₂(110) Rutile
Local Co Structure in Epitaxial Cox Ti₁-xO₂-x Anatase
Ferromagnetism in Doped Thin-Film Oxide and Nitride Semiconductors and Dielectrics
Journal Article
·
Mon May 31 00:00:00 EDT 2004
· Applied Physics Letters, 84(22):4466-4468
·
OSTI ID:15020915
Local Co Structure in Epitaxial Cox Ti₁-xO₂-x Anatase
Journal Article
·
Fri Feb 28 23:00:00 EST 2003
· Physical Review. B, Condensed Matter and Materials Physics, 67(10):22-25, art. no. 100401
·
OSTI ID:15003791
Ferromagnetism in Doped Thin-Film Oxide and Nitride Semiconductors and Dielectrics
Journal Article
·
Sun Oct 01 00:00:00 EDT 2006
· Surface Science Reports, 61(8):345-381
·
OSTI ID:910008