Studies of Damage Accumulation in 4H Silicon Carbide by Ion-Channeling Techniques
Single crystal 4H-SiC was irradiated with 2 MeV Au ions at 165 K. Ion-induced defect configurations and damage accumulation were studied by ion-channeling techniques along the <0001>, <4403> and <2201> directions. A nonlinear dependence of damage accumulation is observed for both the Si and C sublattices along all three directions, and the relative disorder observed along the <4403> and <2201> directions is much higher than that along the <0001> direction. The damage accumulation can be described by a disorder accumulation model, which indicates that defect-stimulated amorphization is the primary amorphization mechanism in SiC, and the high disorder level for the large off-axis angles is partially attributed to a geometrical effect. Molecular dynamics (MD) simulations demonstrate that most single interstitial configurations are shielded by Si and C atoms on the lattice sites along the <0001> direction, which significantly reduces their contribution to the yield along the <0001> direction.
- Research Organization:
- Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 15020552
- Report Number(s):
- PNNL-SA-41754; 3448; KC0201020
- Journal Information:
- Materials Science Forum, 475-479(1-5):1341-1344, Journal Name: Materials Science Forum, 475-479(1-5):1341-1344 Journal Issue: 1-5 Vol. 475-479
- Country of Publication:
- United States
- Language:
- English
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