Enhanced-Depletion-Width GaInNAs Solar Cells Grown by Molecular-Beam Epitaxy

Conference · Tue Feb 01 00:00:00 EST 2005

DOI:https://doi.org/10.1109/PVSC.2005.1488203· OSTI ID:15016500

Ptak, A J; Friedman, D J; Kurtz, S; Kiehl, J

GaInNAs, potentially useful in a 4-junction GaInP2/GaAs/GaInNAs/Ge solar cell, suffers from very low minority-carrier collection lengths. To date, the currents available from GaInNAs solar cells are not high enough to increase the efficiency of a 3-junction device by adding this fourth junction. Here, we grow p-i-n GaInNAs solar cells by molecular-beam epitaxy with wide, intrinsic base layers and internal quantum efficiencies near 1.0. If similar 1.0-eV GaInNAs junctions can be successfully integrated into the 3-junction structure, the resulting 4-junction cell would have a higher efficiency.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC36-99-GO10337
• OSTI ID: 15016500
• Report Number(s): NREL/CP-520-37479; TRN: US200513%%525
• Resource Relation: Conference: Prepared for the 31st IEEE Photovoltaics Specialists Conference and Exhibition, Lake Buena Vista, FL (US), 01/03/2005--01/07/2005; Other Information: PBD: 1 Feb 2005
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
EFFICIENCY
EPITAXY
SOLAR CELLS
SOLAR ENERGY
PV
ENHANCED DEPLETION
SOLAR CELL
QUANTUM EFFICIENCY
CONCENTRATOR MEASUREMENTS
OPEN-CIRCUIT VOLTAGE
BANDGAP
MOLECULAR-BEAM EPITAXY
SOLAR ENERGY - PHOTOVOLTAICS