Lattice-Matched GaNPAs-On-Silicon Tandem Solar Cells
A two-junction device consisting of a 1.7-eV GaNPAs junction on a 1.1-eV silicon junction has the theoretical potential to achieve nearly optimal efficiency for a two-junction tandem cell. We have demonstrated a monolithic III-V-on-silicon tandem solar cell in which most of the III-V layers are nearly lattice-matched to the silicon substrate. The cell includes a 1.8 eV GaNPAs top cell, a GaP-based tunnel junction (TJ), and a diffused silicon junction formed during the epitaxial growth of GaNP on the silicon substrate. This tandem on silicon has a Voc of 1.53 V and an AM1.5G efficiency of 5.2% without any antireflection coating. Low currents in the top cell are the primary limitation to higher efficiency at this point.
- Research Organization:
- National Renewable Energy Lab., Golden, CO (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC36-99GO10337;
- OSTI ID:
- 15016402
- Report Number(s):
- NREL/CP-520-37349
- Resource Type:
- Conference paper/presentation
- Conference Information:
- Prepared for the 31st IEEE Photovoltaics Specialists Conference and Exhibition, Lake Buena Vista, FL (US), 01/03/2005--01/07/2005
- Country of Publication:
- United States
- Language:
- English
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