GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

Conference · Wed May 01 00:00:00 EDT 2002

DOI:https://doi.org/10.1109/PVSC.2002.1190716· OSTI ID:15000994

Geisz, J F; Friedman, D J; Kurtz, S

This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

• Research Organization: National Renewable Energy Lab., Golden, CO. (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC36-99GO10337
• OSTI ID: 15000994
• Report Number(s): NREL/CP-520-32200
• Resource Type: Conference paper/presentation
• Conference Information: Presented at the 29th IEEE PV Specialists Conference, New Orleans, LA (US), 05/20/2002--05/24/2002; Prepared for the 29th IEEE PV Specialists Conference, 20-24 May 2002, New Orleans, Louisiana
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
ALLOYS
AMORPHOUS SILICON
CAPACITANCE VOLTAGE (CV)
DISLOCATIONS
FRONT-SIDE CONTACTS
III-V SEMICONDUCTORS
LATTICE-MATCH
METAL-ORGANIC CHEMICAL VAPOR PHASE
MULTIJUNCTION SOLAR CELLS
PERFORMANCE
PV
QUANTUM EFFICIENCY (QE)
SHORT-CIRCUIT CURRENT
SILICON
SOLAR CELLS
SOLAR ENERGY
SOLAR ENERGY - PHOTOVOLTAICS
SPECTRAL ELLIPSOMETRY (SE)
SUBSTRATES
VAPOR PHASE EPITAXY