VACANCY TRAPPING AND ANNEALING IN NOBLE-METAL FILMS GROWN AT LOW TEMPERATURE
No abstract prepared.
- Research Organization:
- Brookhaven National Laboratory, National Synchrotron Light Source (US)
- Sponsoring Organization:
- DOE/OFFICE OF SCIENCE (US)
- DOE Contract Number:
- AC02-98CH10886
- OSTI ID:
- 15015228
- Report Number(s):
- BNL--74016-2005-JA
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 81; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
VACANCY FORMATION IN HOMOEPITAXIALLY GROWN AG FILMS AND ITS EFFECT ON SURFACE MORPHOLOGY
VACANCY FORMATION DURING LOW-TEMPERATURE AG(001) AND AG(111) HOMOEPITAXY
DIFFUSION BARRIER PROPERTIES OF TRANSITION METAL THIN FILMS GROWN BY PLASMA ENHANCED ATOMIC LAYER DEPOSITION
Journal Article
·
Mon Dec 31 23:00:00 EST 2001
· Physical Review B
·
OSTI ID:15009409
VACANCY FORMATION DURING LOW-TEMPERATURE AG(001) AND AG(111) HOMOEPITAXY
Journal Article
·
Tue Dec 31 23:00:00 EST 2002
· J. BACTERIOL.
·
OSTI ID:884600
DIFFUSION BARRIER PROPERTIES OF TRANSITION METAL THIN FILMS GROWN BY PLASMA ENHANCED ATOMIC LAYER DEPOSITION
Journal Article
·
Mon Dec 31 23:00:00 EST 2001
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
·
OSTI ID:15009012