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DIFFUSION BARRIER PROPERTIES OF TRANSITION METAL THIN FILMS GROWN BY PLASMA ENHANCED ATOMIC LAYER DEPOSITION

Journal Article · Tue Jan 01 04:00:00 EST 2002 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.1486233· OSTI ID:15009012

KIM, H; LAVOIE, C; ROSSNAGEL, S

No abstract prepared.

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Research Organization:: Brookhaven National Laboratory, National Synchrotron Light Source (US)

Sponsoring Organization:: DOE/OFFICE OF SCIENCE (US)

DOE Contract Number:: AC02-98CH10886

OSTI ID:: 15009012

Report Number(s):: BNL--53420

Journal Information:: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 4 Vol. 20

Country of Publication:: United States

Language:: English

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Related Subjects

43 PARTICLE ACCELERATORS
DEPOSITION
DIFFUSION BARRIERS
NATIONAL SYNCHROTRON LIGHT SOURCE
NSLS
PLASMA
THIN FILMS
TRANSITION ELEMENTS