skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: ELECTRONIC STRUCTURE OF THIN FILM SILICON OXYNITRIDES MEASURED USING SOFT X-RAY EMISSION AND ABSORPTION

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.1599629· OSTI ID:15008408

No abstract prepared.

Research Organization:
Brookhaven National Laboratory, National Synchrotron Light Source (US)
Sponsoring Organization:
DOE/OFFICE OF SCIENCE (US)
DOE Contract Number:
AC02-98CH10886
OSTI ID:
15008408
Report Number(s):
BNL-72557-2004-JA; TRN: US200426%%465
Journal Information:
Journal of Applied Physics, Vol. 94, Issue 6; Other Information: PBD: 1 Jan 2003
Country of Publication:
United States
Language:
English