Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices

Aytac, Yigit; Olson, Benjamin Varberg; Kim, Jin K.; Shaner, Eric A.; Hawkins, Samuel D.; Klem, John F.; Flatte, Michael E.; Boggoss, Thomas F.

doi:10.1063/1.4931419

Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices

Journal Article · Tue Sep 22 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4931419· OSTI ID:1496990

Aytac, Yigit ^[1]; ^[2]; Kim, Jin K. ^[2]; Shaner, Eric A. ^[2]; Hawkins, Samuel D. ^[2]; Klem, John F. ^[2]; Flatte, Michael E. ^[1]; ^[1]

Univ. of Iowa, Iowa City, IA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

We present that temperature-dependent measurements of carrier recombination rates using a time-resolved optical pump-probe technique are reported for mid-wave infrared InAs/InAs_1-xSb_x type-2 superlattices (T2SLs). By engineering the layer widths and alloy compositions, a 16 K band-gap of ~235 ± 10 meV was achieved for five unintentionally and four intentionally doped T2SLs. Carrier lifetimes were determined by fitting lifetime models based on Shockley-Read-Hall (SRH), radiative, and Auger recombination processes to the temperature and excess carrier density dependent data. The minority carrier (MC), radiative, and Auger lifetimes were observed to generally increase with increasing antimony content and decreasing layer thickness for the unintentionally doped T2SLs. The MC lifetime is limited by SRH processes at temperatures below 200 K in the unintentionally doped T2SLs. The extracted SRH defect energy levels were found to be near mid-bandgap. Additionally, it is observed that the MC lifetime is limited by Auger recombination in the intentionally doped T2SLs with doping levels greater than n ~10¹⁶ cm^-3.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1496990

Alternate ID(s):: OSTI ID: 22492753

Report Number(s):: SAND--2015-3986J; 672043

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 118; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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