Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices

Aytac, Yigit; Olson, Benjamin Varberg; Kim, Jin K.; Shaner, Eric A.; Hawkins, Samuel D.; Klem, John F.; Flatte, Michael E.; Boggoss, Thomas F.

doi:10.1063/1.4931419

Title: Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices

Journal Article · Tue Sep 22 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4931419· OSTI ID:1496990

Aytac, Yigit ^[1];

^[2]; Kim, Jin K. ^[2]; Shaner, Eric A. ^[2]; Hawkins, Samuel D. ^[2]; Klem, John F. ^[2]; Flatte, Michael E. ^[1];

^[1]

Univ. of Iowa, Iowa City, IA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

We present that temperature-dependent measurements of carrier recombination rates using a time-resolved optical pump-probe technique are reported for mid-wave infrared InAs/InAs_1-xSb_x type-2 superlattices (T2SLs). By engineering the layer widths and alloy compositions, a 16 K band-gap of ~235 ± 10 meV was achieved for five unintentionally and four intentionally doped T2SLs. Carrier lifetimes were determined by fitting lifetime models based on Shockley-Read-Hall (SRH), radiative, and Auger recombination processes to the temperature and excess carrier density dependent data. The minority carrier (MC), radiative, and Auger lifetimes were observed to generally increase with increasing antimony content and decreasing layer thickness for the unintentionally doped T2SLs. The MC lifetime is limited by SRH processes at temperatures below 200 K in the unintentionally doped T2SLs. The extracted SRH defect energy levels were found to be near mid-bandgap. Additionally, it is observed that the MC lifetime is limited by Auger recombination in the intentionally doped T2SLs with doping levels greater than n ~10¹⁶ cm^-3.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1496990

Report Number(s):: SAND-2015-3986J; 672043

Journal Information:: Journal of Applied Physics, Vol. 118, Issue 12; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 20 works

Citation information provided by
Web of Science

References (26)

Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys Olson, B. V.; Shaner, E. A.; Kim, J. K. Applied Physics Letters, Vol. 103, Issue 5 https://doi.org/10.1063/1.4817400	journal	July 2013
Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization Svensson, S. P.; Donetsky, D.; Wang, D. Journal of Crystal Growth, Vol. 334, Issue 1 https://doi.org/10.1016/j.jcrysgro.2011.08.030	journal	November 2011
Influence of radiative and non-radiative recombination on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices Höglund, L.; Ting, D. Z.; Khoshakhlagh, A. Applied Physics Letters, Vol. 103, Issue 22 https://doi.org/10.1063/1.4835055	journal	November 2013
Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence Connelly, Blair C.; Metcalfe, Grace D.; Shen, Hongen Applied Physics Letters, Vol. 97, Issue 25 https://doi.org/10.1063/1.3529458	journal	December 2010
Intensity- and Temperature-Dependent Carrier Recombination in $InAs / In {As}_{1 - x} {S b}_{x}$ Type-II Superlattices Olson, B. V.; Kadlec, E. A.; Kim, J. K. Physical Review Applied, Vol. 3, Issue 4 https://doi.org/10.1103/PhysRevApplied.3.044010	journal	April 2015
High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection Hoang, A. M.; Chen, G.; Chevallier, R. Applied Physics Letters, Vol. 104, Issue 25 https://doi.org/10.1063/1.4884947	journal	June 2014
Design of Phosphorus-Containing MWIR Type-II Superlattices for Infrared Photon Detectors Grein, C. H.; Flatte, M. E.; Evans, A. J. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 19, Issue 5 https://doi.org/10.1109/JSTQE.2012.2222358	journal	September 2013
Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice Olson, B. V.; Shaner, E. A.; Kim, J. K. Applied Physics Letters, Vol. 101, Issue 9 https://doi.org/10.1063/1.4749842	journal	August 2012
Fundamental physics of infrared detector materials Kinch, Michael A. Journal of Electronic Materials, Vol. 29, Issue 6 https://doi.org/10.1007/s11664-000-0229-7	journal	June 2000
Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials Donetsky, Dmitry; Belenky, Gregory; Svensson, Stefan Applied Physics Letters, Vol. 97, Issue 5 https://doi.org/10.1063/1.3476352	journal	August 2010
Study of InAs/InAsSb type-II superlattices using high-resolution x-ray diffraction and cross-sectional electron microscopy Shen, Xiao-Meng; Li, Hua; Liu, Shi Journal of Crystal Growth, Vol. 381 https://doi.org/10.1016/j.jcrysgro.2013.06.021	journal	October 2013
Radiative lifetime in semiconductors for infrared detection Humphreys, R. G. Infrared Physics, Vol. 26, Issue 6 https://doi.org/10.1016/0020-0891(86)90054-0	journal	November 1986
Minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices: Photon recycling and the role of radiative and Shockley-Read-Hall recombination mechanisms Höglund, L.; Ting, D. Z.; Soibel, A. Applied Physics Letters, Vol. 105, Issue 19 https://doi.org/10.1063/1.4902022	journal	November 2014
Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices Aytac, Y.; Olson, B. V.; Kim, J. K. Applied Physics Letters, Vol. 105, Issue 2 https://doi.org/10.1063/1.4890578	journal	July 2014
Theory and modeling of type-II strained-layer superlattice detectors Flatté, Michael E.; Grein, Christoph H. SPIE OPTO: Integrated Optoelectronic Devices, SPIE Proceedings https://doi.org/10.1117/12.814173	conference	January 2009
Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures Donetsky, Dmitry; Svensson, Stefan P.; Vorobjev, Leonid E. Applied Physics Letters, Vol. 95, Issue 21 https://doi.org/10.1063/1.3267103	journal	November 2009
Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb Steenbergen, E. H.; Connelly, B. C.; Metcalfe, G. D. Applied Physics Letters, Vol. 99, Issue 25 https://doi.org/10.1063/1.3671398	journal	December 2011
Recombination processes in semiconductors Hall, R. N. Proceedings of the IEE - Part B: Electronic and Communication Engineering, Vol. 106, Issue 17S https://doi.org/10.1049/pi-b-2.1959.0171	journal	May 1959
Band parameters for III–V compound semiconductors and their alloys Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R. Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875 https://doi.org/10.1063/1.1368156	journal	June 2001
Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs 1-X Sb X alloys Belenky, G.; Kipshidze, G.; Donetsky, D. SPIE Defense, Security, and Sensing, SPIE Proceedings https://doi.org/10.1117/12.883625	conference	May 2011
Post growth annealing study on long wavelength infrared InAs/GaSb superlattices Haugan, H. J.; Brown, G. J.; Elhamri, S. Journal of Applied Physics, Vol. 111, Issue 5 https://doi.org/10.1063/1.3693535	journal	March 2012
Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes Grein, C. H.; Young, P. M.; Flatté, M. E. Journal of Applied Physics, Vol. 78, Issue 12 https://doi.org/10.1063/1.360422	journal	December 1995
Investigation of Trap States in Mid-Wavelength Infrared Type II Superlattices Using Time-Resolved Photoluminescence Connelly, Blair C.; Metcalfe, Grace D.; Shen, Hongen Journal of Electronic Materials, Vol. 42, Issue 11 https://doi.org/10.1007/s11664-013-2759-9	journal	September 2013
Carrier lifetime studies in midwave infrared type-II InAs/GaSb strained layer superlattice Klein, Brianna; Gautam, Nutan; Plis, Elena Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 32, Issue 2 https://doi.org/10.1116/1.4862085	journal	March 2014
Auger recombination in narrow-gap semiconductor superlattices incorporating antimony Grein, C. H.; Flatté, M. E.; Olesberg, J. T. Journal of Applied Physics, Vol. 92, Issue 12 https://doi.org/10.1063/1.1521255	journal	December 2002
Semiconductors: Data Handbook Madelung, Otfried https://doi.org/10.1007/978-3-642-18865-7	book	January 2004

Cited By (2)

Analysis of III–V Superlattice nBn Device Characteristics Rhiger, David R.; Smith, Edward P.; Kolasa, Borys P. Journal of Electronic Materials, Vol. 45, Issue 9 https://doi.org/10.1007/s11664-016-4545-y	journal	April 2016
Carrier Transport in the Valence Band of nBn III–V Superlattice Infrared Detectors Rhiger, David R.; Smith, Edward P. Journal of Electronic Materials, Vol. 48, Issue 10 https://doi.org/10.1007/s11664-019-07319-y	journal	June 2019