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Title: Manipulate the Electronic and Magnetic States in NiCo2O4 Films through Electric-Field-Induced Protonation at Elevated Temperature

Journal Article · · Advanced Materials
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  1. Tsinghua Univ., Beijing (China)
  2. National Chiao Tung Univ., Hsinchu (Taiwan)
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  4. Durham Univ. (United Kingdom)
  5. Tsinghua Univ., Beijing (China); Collaborative Innovation Center for Quantum Matter, Beijing (China)
  6. Tsinghua Univ., Beijing (China); Collaborative Innovation Center for Quantum Matter, Beijing (China); RIKEN Center for Emergent Matter Science (CEMS), Wako (Japan)

Ionic-liquid-gating- (ILG-) induced proton evolution has emerged as a novel strategy to realize electron doping and manipulate the electronic and magnetic ground states in complex oxides. While the study of a wide range of systems (e.g., SrCoO2.5, VO2, WO3, etc.) has demonstrated important opportunities to incorporate protons through ILG, protonation remains a big challenge for many others. Furthermore, the mechanism of proton intercalation from the ionic liquid/solid interface to whole film has not yet been revealed. Here, with a model system of inverse spinel NiCo2O4 , an increase in system temperature during ILG forms a single but effective method to efficiently achieve protonation. Moreover, the ILG induces a novel phase transformation in NiCo2O4 from ferrimagnetic metallic into antiferromagnetic insulating with protonation at elevated temperatures. Finally, this study shows that environmental temperature is an efficient tuning knob to manipulate ILG-induced ionic evolution.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Natural Science Foundation of China (NSFC); National Science Foundation of China (NSFC)
Grant/Contract Number:
AC02-05CH11231; 51788104; 2015CB921700; 2016YFA0301004; 51872155; AC02‐05CH11231
OSTI ID:
1635175
Alternate ID(s):
OSTI ID: 1496910
Journal Information:
Advanced Materials, Vol. 31, Issue 16; ISSN 0935-9648
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 51 works
Citation information provided by
Web of Science

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Cited By (5)

Electric‐Field‐Controlled Antiferromagnetic Spintronic Devices journal March 2020
Proton‐Mediated Phase Control in Flexible and Transparent Mott Transistors journal November 2019
Reversible manipulation of the magnetic state in SrRuO3 through electric-field controlled proton evolution journal January 2020
Dynamic study of phase transition in Bi 2 O 3 epitaxial film induced by electrolyte gating journal December 2019
Emergent electric field control of phase transformation in oxide superlattices text January 2020

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