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Title: Robust Ferromagnetism in Highly Strained SrCoO 3 Thin Films

Journal Article · · Physical Review. X

Epitaxial strain provides important pathways to control the magnetic and electronic states in transition-metal oxides. However, the large strain is usually accompanied by a strong reduction of the oxygen-vacancy formation energy, which hinders the direct manipulation of their intrinsic properties. Here, using a postdeposition ozone annealing method, we obtain a series of oxygen stoichiometric SrCoO3 thin films with the tensile strain up to 3.0%. We observe a robust ferromagnetic ground state in all strained thin films, while interestingly the tensile strain triggers a distinct metal-to-insulator transition along with the increase of the tensile strain. The persistent ferromagnetic state across the electrical transition therefore suggests that the magnetic state is directly correlated with the localized electrons, rather than the itinerant ones, which then calls for further investigation of the intrinsic mechanism of this magnetic compound beyond the double-exchange mechanism.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Natural Science Foundation of China (NSFC); National Basic Research Program of China; Beijing Advanced Innovation Center for FutureChip (ICFC); Engineering and Physical Sciences Research Council (EPSRC); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; Chinese Academy of Sciences (CAS)
Grant/Contract Number:
AC02-05CH11231; AC05-00OR22725; 51788104; 51872155; 2016YFA0301004; EP/N016718/1; 11974401
OSTI ID:
1617707
Alternate ID(s):
OSTI ID: 1617798; OSTI ID: 1775388
Journal Information:
Physical Review. X, Journal Name: Physical Review. X Vol. 10 Journal Issue: 2; ISSN 2160-3308
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 21 works
Citation information provided by
Web of Science

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Figures / Tables (5)