Reverse Annealing Comparisons of PnP and Npn III-V HBTs under Ion Irradiation - Probing the Effects of Thermal and Current Injection Annealing.
Conference
·
OSTI ID:1496696
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1496696
- Report Number(s):
- SAND2014-15665D; 533631
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effects of Metallization Variation on III-V HBTs under Ion Irradiation.
Effects of current injection annealing on III-V heterojunction bipolar transistors.
Effect of Flux on the Defects and Gain Degradation in pnp Si BJTs irradiated with He ions.
Conference
·
Sun Nov 01 00:00:00 EDT 2015
·
OSTI ID:1332059
Effects of current injection annealing on III-V heterojunction bipolar transistors.
Conference
·
Mon Aug 01 00:00:00 EDT 2011
·
OSTI ID:1288650
Effect of Flux on the Defects and Gain Degradation in pnp Si BJTs irradiated with He ions.
Conference
·
Sun Jul 01 00:00:00 EDT 2018
·
OSTI ID:1570327