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Title: Back-surface recombination, electron reflectors, and paths to 28% efficiency for thin-film photovoltaics: A CdTe case study

Abstract

As thin-film and silicon solar technologies mature, questions emerge about the upper bounds of thin-film solar performance and realistic experimental paths to reach them. Directions include increasing absorber hole density and bulk lifetime, improving the junction interface, reducing back-surface recombination, and implementing a back-surface electron reflector. Textbook solutions of idealized p-n junctions create a powerful conceptualization of solar cells as predominantly minority-carrier-driven devices. We demonstrate that thin films are distinct, and models often fail to capture the important role of majority-carrier lifetime, leading to contradictions with lifetime measurements and overestimates of potential device improvement from back-surface passivation and/or reflectors. Furthermore, we identify methods to probe majority-carrier lifetime and re-examine the degree to which back-surface passivation and electron reflectors can increase efficiency for a range of common thin-film interface and absorber properties, using current and emerging CdTe technology as an example. Here, the results indicate that a practical approach is to focus first on improving front-interface recombination velocity and the absorber properties, and then on implementing the back-surface passivation or reflector, which can ultimately allow thin-film solar technology to reach 28% efficiency.

Authors:
 [1];  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1494117
Report Number(s):
NREL/JA-5K00-73045
Journal ID: ISSN 0021-8979
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 125; Journal Issue: 5; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CdTe; lifetime; back surface recombination; electron reflector

Citation Formats

Duenow, Joel N., and Metzger, Wyatt K. Back-surface recombination, electron reflectors, and paths to 28% efficiency for thin-film photovoltaics: A CdTe case study. United States: N. p., 2019. Web. doi:10.1063/1.5063799.
Duenow, Joel N., & Metzger, Wyatt K. Back-surface recombination, electron reflectors, and paths to 28% efficiency for thin-film photovoltaics: A CdTe case study. United States. doi:10.1063/1.5063799.
Duenow, Joel N., and Metzger, Wyatt K. Fri . "Back-surface recombination, electron reflectors, and paths to 28% efficiency for thin-film photovoltaics: A CdTe case study". United States. doi:10.1063/1.5063799.
@article{osti_1494117,
title = {Back-surface recombination, electron reflectors, and paths to 28% efficiency for thin-film photovoltaics: A CdTe case study},
author = {Duenow, Joel N. and Metzger, Wyatt K.},
abstractNote = {As thin-film and silicon solar technologies mature, questions emerge about the upper bounds of thin-film solar performance and realistic experimental paths to reach them. Directions include increasing absorber hole density and bulk lifetime, improving the junction interface, reducing back-surface recombination, and implementing a back-surface electron reflector. Textbook solutions of idealized p-n junctions create a powerful conceptualization of solar cells as predominantly minority-carrier-driven devices. We demonstrate that thin films are distinct, and models often fail to capture the important role of majority-carrier lifetime, leading to contradictions with lifetime measurements and overestimates of potential device improvement from back-surface passivation and/or reflectors. Furthermore, we identify methods to probe majority-carrier lifetime and re-examine the degree to which back-surface passivation and electron reflectors can increase efficiency for a range of common thin-film interface and absorber properties, using current and emerging CdTe technology as an example. Here, the results indicate that a practical approach is to focus first on improving front-interface recombination velocity and the absorber properties, and then on implementing the back-surface passivation or reflector, which can ultimately allow thin-film solar technology to reach 28% efficiency.},
doi = {10.1063/1.5063799},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 5,
volume = 125,
place = {United States},
year = {2019},
month = {2}
}

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Works referenced in this record:

Strategies to increase CdTe solar-cell voltage
journal, May 2007


Time-resolved photoluminescence studies of CdTe solar cells
journal, September 2003

  • Metzger, W. K.; Albin, D.; Levi, D.
  • Journal of Applied Physics, Vol. 94, Issue 5, p. 3549-3555
  • DOI: 10.1063/1.1597974

Electron-Hole Diffusion Lengths Exceeding 1 Micrometer in an Organometal Trihalide Perovskite Absorber
journal, October 2013

  • Stranks, S. D.; Eperon, G. E.; Grancini, G.
  • Science, Vol. 342, Issue 6156, p. 341-344
  • DOI: 10.1126/science.1243982