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Title: Back-surface recombination, electron reflectors, and paths to 28% efficiency for thin-film photovoltaics: A CdTe case study

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.5063799· OSTI ID:1494117
 [1];  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)

As thin-film and silicon solar technologies mature, questions emerge about the upper bounds of thin-film solar performance and realistic experimental paths to reach them. Directions include increasing absorber hole density and bulk lifetime, improving the junction interface, reducing back-surface recombination, and implementing a back-surface electron reflector. Textbook solutions of idealized p-n junctions create a powerful conceptualization of solar cells as predominantly minority-carrier-driven devices. We demonstrate that thin films are distinct, and models often fail to capture the important role of majority-carrier lifetime, leading to contradictions with lifetime measurements and overestimates of potential device improvement from back-surface passivation and/or reflectors. Furthermore, we identify methods to probe majority-carrier lifetime and re-examine the degree to which back-surface passivation and electron reflectors can increase efficiency for a range of common thin-film interface and absorber properties, using current and emerging CdTe technology as an example. Here, the results indicate that a practical approach is to focus first on improving front-interface recombination velocity and the absorber properties, and then on implementing the back-surface passivation or reflector, which can ultimately allow thin-film solar technology to reach 28% efficiency.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1494117
Report Number(s):
NREL/JA-5K00-73045
Journal Information:
Journal of Applied Physics, Vol. 125, Issue 5; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 34 works
Citation information provided by
Web of Science

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Cited By (3)

Exceeding 20% efficiency with in situ group V doping in polycrystalline CdTe solar cells journal August 2019
Light-trapping schemes for silicon thin-film solar cells via super-quadratic subwavelength gratings journal January 2019
Scalable ultrafast epitaxy of large-grain and single-crystal II-VI semiconductors journal February 2020