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Title: High-voltage regrown nonpolar m-plane vertical p-n diodes: A step toward future selective-area-doped power switches

Journal Article · · IEEE Electron Device Letters
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [1];  [1];  [2];  [2];  [3]; ORCiD logo [3];  [3];  [2];  [1]
  1. Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials (CHTM)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. Sandia National Lab. (SNL-CA), Livermore, CA (United States)
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Here, we report high-voltage regrown nonpolar m-plane p-n diodes on freestanding GaN substrates. Secondary-ion mass spectroscopy (SIMS) measurements indicate O and Si spikes at the regrowth interfaces with maximum concentration ~ 5×1017 cm-3, which is similar to previously published c-plane studies. A high blocking voltage of 540 V at ~ 1 mA/cm2 (corresponding to an electric field of E ~ 3.35 MV/cm), turn-on voltages between 2.9-3.1 V, specific on-resistance of 1.7 mΩ.cm2 at 300 A/cm2, and a minimum ideality factor of 1.7 were obtained for the regrown diodes. Our results suggest that Si, O and C interfacial impurity levels up to 2×1017 cm-3, 8×1017 cm-3, and 1×1019 cm-3, respectively, at the metallurgical junction of m-plane p-n diodes do not result in very early breakdown in the reverse bias, although the off-state leakage current in forward bias is affected. The impact of growth interruption/regrowth on diode performance is also investigated.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA); USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Grant/Contract Number:
AC04-94AL85000; NA0003525; AR0000869
OSTI ID:
1492795
Alternate ID(s):
OSTI ID: 1490815
Report Number(s):
SAND-2019-0550J; 671646
Journal Information:
IEEE Electron Device Letters, Vol. 40, Issue 3; ISSN 0741-3106
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 19 works
Citation information provided by
Web of Science

Cited By (3)

Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐ Plane GaN Vertical p–n Diodes journal December 2019
Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes journal November 2019
Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN journal February 2020

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Related Subjects

24 POWER TRANSMISSION AND DISTRIBUTION
GaN
nonpolar
vertical p-n diodes
selective-area doping
leakage currents
ideality factor
specific on-resistance
impurity incorporation
42 ENGINEERING