Multiscale Modeling of Total Ionizing Dose Effects in Commercial-off-the-Shelf Parts in Bipolar Technologies

Journal Article · Tue Jan 01 00:00:00 EST 2019 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/TNS.2018.2887235· OSTI ID:1492358

Privat, Aymeric ^[1]; Barnaby, Hugh J. ^[1]; Adell, Phillipe C. ^[2]; Tolleson, B. S. ^[1]; Wang, Y. ^[1]; Han, X. ^[1]; Davis, P. ^[1]; Rax, B. R. ^[2]; Buchheit, Thomas E. ^[3]

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1. Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer, and Energy Engineering
2. California Inst. of Technology (CalTech), La Canada Flintridge, CA (United States). Jet Propulsion Lab., Radiation Effects and Reliability Group
3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Electrical and Radiation Sciences

A multiscale modeling platform that supports the “virtual” qualification of commercial-off-the-shelf parts is presented. The multiscale approach is divided into two modules. The first module generates information related to the bipolar junction transistor gain degradation that is a function of fabrication process, operational, and environmental inputs. The second uses this information as inputs for radiation-enabled circuit simulations. The prototype platform described in this paper estimates the total ionizing dose and dose rate responses of linear bipolar integrated circuits for different families of components. The simulation and experimental results show good correlation and suggest this platform to be a complementary tool within the radiation-hardness assurance flow. Finally, the platform may reduce some of the costly reliance on testing for all systems.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• Grant/Contract Number: AC04-94AL85000
• OSTI ID: 1492358
• Report Number(s): SAND--2018-14257J; 671038
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 1 Vol. 66; ISSN 0018-9499
• Publisher: IEEE
• Country of Publication: United States
• Language: English

Related Subjects

97 MATHEMATICS AND COMPUTING
Bipolar transistor
Computational modeling
commercial-off-the-shelf (COTS)
enhanced low-dose rate sensitivity (ELDRS)
modeling
n-p-n
p-n-p
qualification
total ionizing dose (TID)