Growth of CdMnTe free of large Te inclusions using the vertical Bridgman technique

Roy, U. N.; Camarda, G. S.; Cui, Y.; Gul, R.; Hossain, A.; Yang, G.; Okobiah, O. K.; Egarievwe, S. U.; James, R. B.

doi:10.1016/j.jcrysgro.2018.12.026

Title: Growth of CdMnTe free of large Te inclusions using the vertical Bridgman technique

Journal Article · Mon Dec 24 00:00:00 EST 2018 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2018.12.026· OSTI ID:1490311

Roy, U. N. ^[1]; Camarda, G. S. ^[1]; Cui, Y. ^[1]; Gul, R. ^[2]; Hossain, A. ^[1]; Yang, G. ^[3]; Okobiah, O. K. ^[2];

^[2]; James, R. B. ^[4]

Brookhaven National Lab. (BNL), Upton, NY (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States); Alabama A&M Univ., Normal, AL (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States); North Carolina State Univ., Raleigh, NC (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States); Savannah River National Lab., Aiken, SC (United States)

Here, we grew Cd_1-xMn_xTe crystals with a nominal composition of 5% Mn and 95% Cd using the vertical Bridgman technique. We were able to grow crystals from as-received starting material that were free of secondary phases, such as Te inclusions with a size > 1-µm diameter, without adding compensating Cd to the initial charge. The Te precipitations (size < 1-µm diameter) were found to segregate towards the last-to-freeze section of the ingot. Te inclusions with a size 5-7 µm were observed at the grain boundary located near the last-to-freeze section, while the bottom and middle parts of the ingot showed no Te inclusions, even at the grain boundaries. X-ray topographic analysis was used to characterize the distribution of thermal stress in the ingot.

View Accepted Manuscript (DOE)

View Accepted Manuscript (Publisher)

Cite

Export

Save

Research Organization:: Savannah River Site (SRS), Aiken, SC (United States); Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22); USDOE

Grant/Contract Number:: AC09-08SR22470; SC0012704

OSTI ID:: 1490311

Alternate ID(s):: OSTI ID: 1489339; OSTI ID: 1635972

Report Number(s):: SRNL-STI-2018-00717; BNL-210837-2019-JAAM; PII: S0022024818306389

Journal Information:: Journal of Crystal Growth, Vol. 509, Issue C; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 10 works

Citation information provided by
Web of Science

References (23)

Molecular beam epitaxy of diluted magnetic semiconductor (Cd ₁ _{− x} Mn _x Te) superlattices Kolodziejski, L. A.; Bonsett, T. C.; Gunshor, R. L. Applied Physics Letters, Vol. 45, Issue 4 https://doi.org/10.1063/1.95223	journal	August 1984
Diluted magnetic semiconductors Furdyna, J. K. Journal of Applied Physics, Vol. 64, Issue 4 https://doi.org/10.1063/1.341700	journal	August 1988
New class of materials for optical isolators Turner, Allen E.; Gunshor, Robert L.; Datta, Supriyo Applied Optics, Vol. 22, Issue 20 https://doi.org/10.1364/AO.22.003152	journal	January 1983
Interband Faraday rotation in diluted magnetic semiconductors: ${Zn}_{1 - x}$ ${Mn}_{x}$ Te and ${Cd}_{1 - x}$ ${Mn}_{x}$ Te Bartholomew, D. U.; Furdyna, J. K.; Ramdas, A. K. Physical Review B, Vol. 34, Issue 10 https://doi.org/10.1103/PhysRevB.34.6943	journal	November 1986
Spin-flip Raman scattering in a diluted magnetic semiconductor: Cd1−xMnxTe Peterson, D. L.; Petrou, A.; Dutta, M. Solid State Communications, Vol. 43, Issue 9 https://doi.org/10.1016/0038-1098(82)90767-0	journal	September 1982
Paramagnetic—spin-glass—antiferromagnetic phase transitions in ${Cd}_{1 - x} {Mn}_{x} Te$ from specific heat and magnetic susceptibility measurements Galazka, R. R.; Nagata, Shoichi; Keesom, P. H. Physical Review B, Vol. 22, Issue 7 https://doi.org/10.1103/PhysRevB.22.3344	journal	October 1980
Magnetic-field sensor using plastic optical fiber and polycrystalline CdMnTe Guerrero, H.; Escudero, J. L.; Bernabeu, E. Sensors and Actuators A: Physical, Vol. 39, Issue 1 https://doi.org/10.1016/0924-4247(93)80177-I	journal	September 1993
Twin-free (Cd, Mn)Te substrates Triboulet, R.; Heurtel, A.; Rioux, J. Journal of Crystal Growth, Vol. 101, Issue 1-4 https://doi.org/10.1016/0022-0248(90)90951-G	journal	April 1990
Vertical Bridgman growth and characterization of CdMnTe substrates for HgCdTe epitaxy Zhang, Jijun; Jie, Wanqi; Wang, Tao Journal of Crystal Growth, Vol. 310, Issue 13 https://doi.org/10.1016/j.jcrysgro.2008.03.024	journal	June 2008
Study of the crystalline quality of CdTe, CdZnTe and CdMnTe substrates used for liquid phase epitaxy of Cd0.7Hg0.3Te Guergouri, K.; Ferah, M. S.; Triboulet, R. Journal of Crystal Growth, Vol. 139, Issue 1-2 https://doi.org/10.1016/0022-0248(94)90022-1	journal	May 1994
Crystal growth, fabrication and evaluation of cadmium manganese telluride gamma ray detectors Burger, Arnold; Chattopadhyay, Kaushik; Chen, Henry Journal of Crystal Growth, Vol. 198-199 https://doi.org/10.1016/S0022-0248(98)01171-3	journal	March 1999
Is the (Cd,Mn)Te crystal a prospective material for X-ray and ?-ray detectors? Mycielski, A.; Burger, A.; Sowinska, M. physica status solidi (c), Vol. 2, Issue 5 https://doi.org/10.1002/pssc.200460838	journal	March 2005
Vanadium-Doped Cadmium Manganese Telluride (Cd1−x Mn x Te) Crystals as X- and Gamma-Ray Detectors Hossain, A.; Cui, Y.; Bolotnikov, A. E. Journal of Electronic Materials, Vol. 38, Issue 8 https://doi.org/10.1007/s11664-009-0780-9	journal	April 2009
Zinc and selenium co-doped CdTe substrates lattice matched to HgCdTe Tanaka, A.; Masa, Y.; Seto, S. Journal of Crystal Growth, Vol. 94, Issue 1 https://doi.org/10.1016/0022-0248(89)90615-5	journal	January 1989
Effect of Te precipitates on the performance of CdZnTe detectors Carini, G. A.; Bolotnikov, A. E.; Camarda, G. S. Applied Physics Letters, Vol. 88, Issue 14 https://doi.org/10.1063/1.2189912	journal	April 2006
Defects in CdTe bridgman monocrystals caused by nonstoichiometric growth conditions Rudolph, P.; Neubert, M.; M:uhlberg, M. Journal of Crystal Growth, Vol. 128, Issue 1-4 https://doi.org/10.1016/S0022-0248(07)80004-2	journal	March 1993
Recipe to minimize Te precipitation in CdTe and (Cd,Zn)Te crystals Vydyanath, H. R. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 10, Issue 4 https://doi.org/10.1116/1.586275	journal	July 1992
Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors Yang, G.; Bolotnikov, A. E.; Fochuk, P. M. Journal of Crystal Growth, Vol. 379 https://doi.org/10.1016/j.jcrysgro.2012.11.041	journal	September 2013
Bulk growth of uniform and near stoichiometric cadmium telluride Swain, Santosh K.; Cui, Yunlong; Datta, Amlan Journal of Crystal Growth, Vol. 389 https://doi.org/10.1016/j.jcrysgro.2013.12.004	journal	March 2014
Modified Bridgman growth of CdTe crystals Saucedo, E.; Rudolph, P.; Dieguez, E. Journal of Crystal Growth, Vol. 310, Issue 7-9 https://doi.org/10.1016/j.jcrysgro.2007.11.181	journal	April 2008
Reduction of CdZnTe substrate defects and relation to epitaxial HgCdTe quality Sen, S.; Liang, C. S.; Rhiger, D. R. Journal of Electronic Materials, Vol. 25, Issue 8 https://doi.org/10.1007/BF02655007	journal	August 1996
Infrared contrast of inclusions in CdTe Brion, H. G.; Mewes, C.; Hahn, I. Journal of Crystal Growth, Vol. 134, Issue 3-4 https://doi.org/10.1016/0022-0248(93)90137-L	journal	December 1993
Growth and characterization of CdMnTe by the vertical Bridgman technique Roy, U. N.; Camarda, G. S.; Cui, Y. Journal of Crystal Growth, Vol. 437 https://doi.org/10.1016/j.jcrysgro.2015.12.017	journal	March 2016

Cited By (1)

Novel Electrodes and Engineered Interfaces for Halide-Semiconductor Radiation Detectors Datta, Amlan; Becla, Piotr; Motakef, Shariar Scientific Reports, Vol. 9, Issue 1 https://doi.org/10.1038/s41598-019-46360-z	journal	July 2019

Similar Records

Growth and characterization of detector-grade CdMnTe by the vertical Bridgman technique

Journal Article · Tue Dec 29 00:00:00 EST 2015 · Journal of Crystal Growth · OSTI ID:1490311

Roy, U. N.; Okobiah, O. K.; Camarda, G. S.; +6 more

Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors

Journal Article · Wed Feb 11 00:00:00 EST 2015 · Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment · OSTI ID:1490311

Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander; +7 more

Vertical Bridgman growth and characterization of Cd_0.95-xMn_xZn_0.05Te (x=0.20, 0.30) single-crystal ingots

Technical Report · Tue Aug 01 00:00:00 EDT 2017 · OSTI ID:1490311

Bolotnikov, A.; Kopach, V.; Kopach, O.; +4 more

Related Subjects

36 MATERIALS SCIENCE

Title: Growth of CdMnTe free of large Te inclusions using the vertical Bridgman technique

Citation Formats

References (23)

Cited By (1)

Similar Records

Related Subjects