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Title: Gate-Tunable Topological Flat Bands in Trilayer Graphene Boron-Nitride Moiré Superlattices

Journal Article · · Physical Review Letters

Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-05-CH11231
OSTI ID:
1489425
Journal Information:
Physical Review Letters, Journal Name: Physical Review Letters Vol. 122 Journal Issue: 1; ISSN 0031-9007
Publisher:
American Physical SocietyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 95 works
Citation information provided by
Web of Science

References (37)

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Hofstadter’s butterfly and the fractal quantum Hall effect in moiré superlattices journal May 2013
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Cloning of Dirac fermions in graphene superlattices journal May 2013
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Electronic structure of spontaneously strained graphene on hexagonal boron nitride journal September 2014
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Correlated insulator behaviour at half-filling in magic-angle graphene superlattices journal March 2018
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Persistent current states in bilayer graphene journal April 2015
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Massive Dirac Fermions and Hofstadter Butterfly in a van der Waals Heterostructure journal May 2013
Quantum-Confined Electronic States Arising from the Moiré Pattern of MoS 2 –WSe 2 Heterobilayers journal February 2018
Band structure of A B C -stacked graphene trilayers journal July 2010
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Berry phase effects on electronic properties journal July 2010
Emergence of superlattice Dirac points in graphene on hexagonal boron nitride journal March 2012

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