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Title: Comparative study of the pressure dependence of optical-phonon transverse-effective charges and linewidths in wurtzite InN

Journal Article · · Physical Review B
 [1];  [2];  [3];  [4];  [5];  [5];  [6];  [6];  [7]
  1. Inst. de Ciència de Materials de Barcelona-CSIC, Bellaterra (Spain)
  2. Inst. de Ciència de Materials de Barcelona-CSIC, Bellaterra (Spain); Univ. Federal do Pará, Belém, Pará (Brazil)
  3. West Virginia Univ., Morgantown, WV (United States); Benemérita Univ. Autónoma de Puebla, Puebla (Mexico)
  4. Yachay Tech Univ., Urcuqu (Ecuador)
  5. Technische Univ. Berlin (Germany)
  6. Univ. of California, Santa Barbara, CA (United States)
  7. Inst. de Ciència de Materials de Barcelona-CSIC, Bellaterra (Spain); Inst. Catalana de Recerca i Estudis Avançats (ICREA), Barcelona (Spain)

In this work, we investigate the hydrostatic pressure dependence of the zone center optical phonons of c -plane and a -plane wurtzite InN epilayers grown on GaN substrates. The longitudinal to transverse mode splitting for the A 1 and E 1 modes was found to increase with increasing pressure, whereas the associated transverse effective charge decreases for both modes as e T * ( A 1 ) = 2.93 9.9 × 10 - 3 P and e T * ( E 1 ) = 2.80 10.6 × 10 - 3 P (in units of elementary charge and P in GPa). These observations are well in line with results for other II–VI, III–V, and group-IV semiconductor compounds as far as the relation between the magnitude and sign of the pressure derivative of e T * and the bond ionicity is concerned. As the latter increases so does | e T * / P | with a sign change from positive to negative for bond ionicities around f i = 0.46 for compounds with anions belonging to the first row of the Periodic Table. A comparison of the results for InN and other nine tetrahedrally bonded compounds indicate that the pressure behavior of the transverse effective charge is mainly determined by the strength of the Pauli repulsion between cation valence electrons and those of the anion core. We also perform ab initio calculations in order to address the origin of the observed increase in linewidth of the E 2 high mode which is found to arise from a pressure-induced increase in the rate of two-phonon decay processes. In conclusion, this broadening is associated with tuning into resonance of a steep edge in the two-phonon density of states around 460 cm - 1 with the frequency of the E 2 high mode.

Research Organization:
West Virginia Univ., Morgantown, WV (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); Spanish Ministerio de Economía, Industria y Competitividad; US Air Force Office of Scientific Research (AFOSR); US Department of the Navy, Office of Naval Research (ONR)
Grant/Contract Number:
SC0016176; SEV-2015-0496; OCI-1053575; MAT2015-70850-P; CSD2010-00044; MAT2017-90024-P; DMREF-NSF-1434897
OSTI ID:
1593996
Alternate ID(s):
OSTI ID: 1478561
Journal Information:
Physical Review B, Vol. 98, Issue 16; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 8 works
Citation information provided by
Web of Science

References (29)

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Ab initio pseudopotentials for electronic structure calculations of poly-atomic systems using density-functional theory journal June 1999
Raman scattering study of wurtzite and rocksalt InN under high pressure journal March 2006
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Thermal properties of indium nitride journal March 1998
Dependence on pressure of the refractive indices of wurtzite ZnO, GaN, and AlN journal July 2014
High-pressure Raman scattering in wurtzite indium nitride journal July 2011
Pressure dependence of the optical phonons and transverse effective charge in 3 C -SiC journal March 1982
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Lifetime of Phonons in Semiconductors under Pressure journal February 1997
Pressure dependence of the lattice dynamics of ZnO: An ab initio approach journal March 2004
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Experimental studies of lattice dynamical properties in indium nitride journal March 2004
Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells journal June 1997
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Selective excitation of E 1 ( LO ) and A 1 ( LO ) phonons with large wave vectors in the Raman spectra of hexagonal InN journal August 2009
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Effect of pressure on the Raman anomaly of zinc-blende CuBr and Raman spectra of high-pressure phases journal July 2001
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Cited By (2)

Effects of temperature and pressure on the optical and vibrational properties of thermoelectric SnSe journal January 2019
Photocurrent measurements of InGaN/GaN quantum wells under hydrostatic and uniaxial pressure journal March 2019

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