Sn submonolayer-mediated Ge heteroepitaxy on Si(001)
Journal Article
·
· Physical Review, B: Condensed Matter
- Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)
- Department of Electrical Engineering, Kyoto University, Kyoto 606 (Japan)
The influence of a Sn submonolayer on the growth mode of Ge on Si(001) during molecular-beam epitaxy has been studied by transmission-electron microscopy and reflection high-energy electron diffraction. It was found that Sn-mediated growth promotes Ge island formation, suggesting that Sn acts to enhance the surface mobility of Ge adatoms. It is pointed out that being able to uniformly cover and strongly segregate to the growing surface is necessary, but not sufficient, for a surfactant to effectively suppress Ge islanding on Si.
- Research Organization:
- Lawrence Berkeley National Laboratory
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 147792
- Journal Information:
- Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 23 Vol. 52; ISSN 0163-1829; ISSN PRBMDO
- Country of Publication:
- United States
- Language:
- English
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