A capacitance spectroscopy-based platform for realizing gate-defined electronic lattices
- Delft Univ. of Technology (Netherlands)
- Purdue Univ., West Lafayette, IN (United States)
- Swiss Federal Inst. of Technology (ETH), Zurich (Switzerland)
- Solid State Physics Laboratory, ETH Zürich, 8093 Zürich, Switzerland
Electrostatic confinement in semiconductors provides a flexible platform for the emulation of interacting electrons in a two-dimensional lattice, including in the presence of gauge fields. This combination offers the potential to realize a wide host of quantum phases. Capacitance spectroscopy demonstrates a technique that allows one to directly probe the density of states of such two-dimensional electron systems. Here, we present a measurement and fabrication scheme that builds on capacitance spectroscopy and allows for the independent control of density and periodic potential strength imposed on a two-dimensional electron gas. We characterize disorder levels and (in)homogeneity and develop and optimize different gating strategies at length scales where interactions are expected to be strong. A continuation of these ideas might see to fruition the emulation of interaction-driven Mott transitions or Hofstadter butterfly physics
- Research Organization:
- Purdue Univ., West Lafayette, IN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); Swiss National Science Foundation (SNSF); Netherlands Organization of Scientific Research (NWO)
- Grant/Contract Number:
- SC0006671
- OSTI ID:
- 1527168
- Alternate ID(s):
- OSTI ID: 1474208
- Journal Information:
- Journal of Applied Physics, Vol. 124, Issue 12; ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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