High voltage semiconductor devices and methods of making the devices
Patent
·
OSTI ID:1471407
Metal-oxide-semiconductor field-effect transistor (MOSFET) devices are described which have a p-type region between the p-type well regions of the device. The p-type region can be either floating or connected to the p-type well regions by additional p-type regions. MOSFET devices are also described which have one or more p-type regions connecting the p-type well regions of the device. The p-type well regions can be arranged in a various geometric arrangements including square, diamond and hexagonal. Methods of making the devices are also described.
- Research Organization:
- Monolith Semiconductor Inc., Round Rock, TX (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AR0000442
- Assignee:
- Monolith Semiconductor Inc. (Round Rock, TX)
- Patent Number(s):
- 10,062,749
- Application Number:
- 14/303,019
- OSTI ID:
- 1471407
- Country of Publication:
- United States
- Language:
- English
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