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Thermal and thermoelectric transport measurements of an individual boron arsenide microstructure

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4950970· OSTI ID:1471111
 [1];  [2];  [3];  [2];  [3];  [2];  [3]
  1. Univ. of Texas, Austin, TX (United States). Dept. of Mechanical Engineering; University of Texas at Austin
  2. Univ. of Texas, Austin, TX (United States). Dept. of Chemistry
  3. Univ. of Texas, Austin, TX (United States). Dept. of Mechanical Engineering
Recent first principles calculations have predicted that boron arsenide (BAs) can possess an unexpectedly high thermal conductivity that depends sensitively on the crystal size and defect concentration. However, few experimental results have been obtained to verify these predictions. In the present work, we report four-probe thermal and thermoelectric transport measurements of an individual BAs microstructure that was synthesized via a vapor transport method. The measured thermal conductivity was found to decrease slightly with temperature in the range between 250K and 350 K. The temperature dependence suggests that the extrinsic phonon scattering processes play an important role in addition to intrinsic phonon-phonon scattering. The room temperature value of (186646) Wm-1K-1 is higher than that of bulk silicon but still a factor of four lower than the calculated result for a defect-free, non-degenerate BAs rod with a similar diameter of 1.15 μm. The measured p-type Seebeck coefficient and thermoelectric power factor are comparable to those of bismuth telluride, which is a commonly used thermoelectric material. In conclusion, the foregoing results also suggest that it is necessary to not only reduce defect and boundary scatterings but also to better understand and control the electron scattering of phonons in order to achieve the predicted ultrahigh intrinsic lattice thermal conductivity of BAs.
Research Organization:
Univ. of Texas, Austin, TX (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
FG02-07ER46377
OSTI ID:
1471111
Alternate ID(s):
OSTI ID: 22591731
OSTI ID: 1253660
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 108; ISSN APPLAB; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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High Thermal Conductivity in Boron Arsenide: From Prediction to Reality journal April 2019
High Thermal Conductivity in Boron Arsenide: From Prediction to Reality journal April 2019
Seeded growth of boron arsenide single crystals with high thermal conductivity journal January 2018
Impurity-derived p -type conductivity in cubic boron arsenide journal December 2018
Mechanical properties of boron arsenide single crystal journal April 2019
Perspective on ab initio phonon thermal transport journal August 2019
Comparison of four-probe thermal and thermoelectric transport measurements of thin films and nanostructures with microfabricated electro-thermal transducers journal February 2018
Ab initio study of the effect of vacancies on the thermal conductivity of boron arsenide journal July 2016
Four-phonon scattering significantly reduces intrinsic thermal conductivity of solids journal October 2017
Ab initio phonon point defect scattering and thermal transport in graphene journal January 2018
Simultaneously high electron and hole mobilities in cubic boron-V compounds: BP, BAs, and BSb journal August 2018
Antisite Pairs Suppress the Thermal Conductivity of BAs journal September 2018
Electronic band structure and optical properties of boron arsenide journal May 2019
Unusual high thermal conductivity in boron arsenide bulk crystals journal July 2018
High thermal conductivity in cubic boron arsenide crystals journal July 2018
Simultaneously high electron and hole mobilities in cubic boron-V compounds: BP, BAs and BSb text January 2018

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