Impurity-derived p-type conductivity in cubic boron arsenide

doi:10.1063/1.5058134

Title: Impurity-derived p-type conductivity in cubic boron arsenide

Authors:

Lyons, John L. ^[1]; Varley, Joel B. ^[2]; Glaser, Evan R. ^[1]; Freitas, Jaime A. ^[1]; Culbertson, James C. ^[1];

^[3]; Gamage, Geethal Amila ^[3]; Sun, Haoran ^[3]; Ziyaee, Hamidreza ^[3]; Ren, Zhifeng ^[3]

Naval Research Lab. (NRL), Washington, DC (United States)
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Univ. of Houston, Houston, TX (United States)

Publication Date:: 2018-12-20

Research Org.:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC); US Department of the Navy, Office of Naval Research (ONR); USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1545270

Alternate Identifier(s):: OSTI ID: 1577944

Report Number(s):: LLNL-JRNL-792285
Journal ID: ISSN 0003-6951

Grant/Contract Number:: AC52-07NA27344; N00014-16-1-2436

Resource Type:: Journal Article: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 113; Journal Issue: 25; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Materials science

Citation Formats


                    Lyons, John L., Varley, Joel B., Glaser, Evan R., Freitas, Jaime A., Culbertson, James C., Tian, Fei, Gamage, Geethal Amila, Sun, Haoran, Ziyaee, Hamidreza, and Ren, Zhifeng. Impurity-derived p-type conductivity in cubic boron arsenide.  United States: N. p., 2018. 
        Web.  doi:10.1063/1.5058134.

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                    Lyons, John L., Varley, Joel B., Glaser, Evan R., Freitas, Jaime A., Culbertson, James C., Tian, Fei, Gamage, Geethal Amila, Sun, Haoran, Ziyaee, Hamidreza, & Ren, Zhifeng. Impurity-derived p-type conductivity in cubic boron arsenide.  United States.  doi:10.1063/1.5058134.

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                    Lyons, John L., Varley, Joel B., Glaser, Evan R., Freitas, Jaime A., Culbertson, James C., Tian, Fei, Gamage, Geethal Amila, Sun, Haoran, Ziyaee, Hamidreza, and Ren, Zhifeng. Thu .  
        "Impurity-derived p-type conductivity in cubic boron arsenide".  United States.  doi:10.1063/1.5058134.  https://www.osti.gov/servlets/purl/1545270.

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@article{osti_1545270,

  title        = {Impurity-derived p-type conductivity in cubic boron arsenide},

  author       = {Lyons, John L. and Varley, Joel B. and Glaser, Evan R. and Freitas, Jaime A. and Culbertson, James C. and Tian, Fei and Gamage, Geethal Amila and Sun, Haoran and Ziyaee, Hamidreza and Ren, Zhifeng},

  abstractNote = {},

  doi          = {10.1063/1.5058134},

  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 25,

  volume       = 113,

  place        = {United States},

  year         = {2018},

  month        = {12}

}

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DOI: 10.1063/1.5058134

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Cited by: 14 works

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Works referenced in this record:

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Boron arsenide phonon dispersion from inelastic x-ray scattering: Potential for ultrahigh thermal conductivity
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Works referencing / citing this record:

Electronic band structure and optical properties of boron arsenide
journal, May 2019

Buckeridge, J.; Scanlon, D. O.
Physical Review Materials, Vol. 3, Issue 5
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High Thermal Conductivity in Boron Arsenide: From Prediction to Reality
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Tian, Fei; Ren, Zhifeng
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Boron arsenide heterostructures: lattice-matched heterointerfaces and strain effects on band alignments and mobility
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Bushick, Kyle; Chae, Sieun; Deng, Zihao
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Tian, Fei; Luo, Kun; Xie, Chenlong
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Thermodynamic calculation and its experimental correlation with the growth process of boron arsenide single crystals
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Ziyaee, Hamidreza; Gamage, Geethal Amila; Sun, Haoran
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Effect of boron sources on the growth of boron arsenide single crystals by chemical vapor transport
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Gamage, Geethal Amila; Sun, Haoran; Ziyaee, Hamidreza
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Electronic structure of B _x Ga _1−x As alloys using hybrid functionals
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Gulyas, Istvan; Kudrawiec, Robert; Wistey, Mark A.
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Similar Records

Title: Impurity-derived p-type conductivity in cubic boron arsenide

Citation Formats

Unusual high thermal conductivity in boron arsenide bulk crystals journal, July 2018

Paramagnetic Resonance Absorption from Acceptors in Silicon journal, October 1960

Simultaneously high electron and hole mobilities in cubic boron-V compounds: BP, BAs, and BSb journal, August 2018

Projector augmented-wave method journal, December 1994

Seeded growth of boron arsenide single crystals with high thermal conductivity journal, January 2018

Four-phonon scattering significantly reduces intrinsic thermal conductivity of solids journal, October 2017

Thermal and thermoelectric transport measurements of an individual boron arsenide microstructure journal, May 2016

Electrostatic interactions between charged defects in supercells journal, December 2010

Electronic structure of BAs and boride III-V alloys journal, November 2000

Fully Ab Initio Finite-Size Corrections for Charged-Defect Supercell Calculations journal, January 2009

From ultrasoft pseudopotentials to the projector augmented-wave method journal, January 1999

The bond ionicity in ANB8−N compounds from maximally localized Wannier functions journal, July 2015

First-principles calculations for point defects in solids journal, March 2014

Commentary: The Materials Project: A materials genome approach to accelerating materials innovation journal, July 2013

Ab initio study of the effect of vacancies on the thermal conductivity of boron arsenide journal, July 2016

Preparation and Properties of Boron Arsenide Films journal, January 1974

First-Principles Determination of Ultrahigh Thermal Conductivity of Boron Arsenide: A Competitor for Diamond? journal, July 2013

Antisite Pairs Suppress the Thermal Conductivity of BAs journal, September 2018

Experimental observation of high thermal conductivity in boron arsenide journal, July 2018

Electron paramagnetic resonance of boron acceptors in isotopically purified silicon journal, April 2010

The chips are down for Moore’s law journal, February 2016

Erratum: “Hybrid functionals based on a screened Coulomb potential” [J. Chem. Phys. 118, 8207 (2003)] journal, June 2006

Descriptor-Based Approach for the Prediction of Cation Vacancy Formation Energies and Transition Levels journal, October 2017

Point defects and dopants of boron arsenide from first-principles calculations: Donor compensation and doping asymmetry journal, November 2018

Experimental study of the proposed super-thermal-conductor: BAs journal, February 2015

Synthesis and Characterization of a p-Type Boron Arsenide Photoelectrode journal, June 2012

Gas-pressure chemical vapor transport growth of millimeter-sized c-BAs single crystals with moderate thermal conductivity journal, June 2018

Boron arsenide phonon dispersion from inelastic x-ray scattering: Potential for ultrahigh thermal conductivity journal, December 2016

Pair Spectra and "Edge" Emission in Gallium Phosphide journal, January 1964

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Thermal conductivity of isotopically modified single crystal diamond journal, June 1993

High thermal conductivity in cubic boron arsenide crystals journal, July 2018

Calculated electronic, transport, and related properties of zinc blende boron arsenide (zb-BAs) journal, October 2016

Inter-impurity recombinations in semiconductors journal, January 1973

Electronic band structure and optical properties of boron arsenide journal, May 2019

High Thermal Conductivity in Boron Arsenide: From Prediction to Reality journal, April 2019

Boron arsenide heterostructures: lattice-matched heterointerfaces and strain effects on band alignments and mobility journal, January 2020

Mechanical properties of boron arsenide single crystal journal, April 2019

Thermodynamic calculation and its experimental correlation with the growth process of boron arsenide single crystals journal, October 2019

Effect of boron sources on the growth of boron arsenide single crystals by chemical vapor transport journal, August 2019

Electronic structure of B x Ga 1−x As alloys using hybrid functionals journal, September 2019

Unusual high thermal conductivity in boron arsenide bulk crystals
journal, July 2018

Paramagnetic Resonance Absorption from Acceptors in Silicon
journal, October 1960

Simultaneously high electron and hole mobilities in cubic boron-V compounds: BP, BAs, and BSb
journal, August 2018

Projector augmented-wave method
journal, December 1994

Seeded growth of boron arsenide single crystals with high thermal conductivity
journal, January 2018

Four-phonon scattering significantly reduces intrinsic thermal conductivity of solids
journal, October 2017

Thermal and thermoelectric transport measurements of an individual boron arsenide microstructure
journal, May 2016

Electrostatic interactions between charged defects in supercells
journal, December 2010

Electronic structure of BAs and boride III-V alloys
journal, November 2000

Fully Ab Initio Finite-Size Corrections for Charged-Defect Supercell Calculations
journal, January 2009

From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999

The bond ionicity in ANB8−N compounds from maximally localized Wannier functions
journal, July 2015

First-principles calculations for point defects in solids
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Commentary: The Materials Project: A materials genome approach to accelerating materials innovation
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Ab initio study of the effect of vacancies on the thermal conductivity of boron arsenide
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Preparation and Properties of Boron Arsenide Films
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First-Principles Determination of Ultrahigh Thermal Conductivity of Boron Arsenide: A Competitor for Diamond?
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Antisite Pairs Suppress the Thermal Conductivity of BAs
journal, September 2018

Experimental observation of high thermal conductivity in boron arsenide
journal, July 2018

Electron paramagnetic resonance of boron acceptors in isotopically purified silicon
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The chips are down for Moore’s law
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Erratum: “Hybrid functionals based on a screened Coulomb potential” [J. Chem. Phys. 118, 8207 (2003)]
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Descriptor-Based Approach for the Prediction of Cation Vacancy Formation Energies and Transition Levels
journal, October 2017

Point defects and dopants of boron arsenide from first-principles calculations: Donor compensation and doping asymmetry
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Experimental study of the proposed super-thermal-conductor: BAs
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Synthesis and Characterization of a p-Type Boron Arsenide Photoelectrode
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Gas-pressure chemical vapor transport growth of millimeter-sized c-BAs single crystals with moderate thermal conductivity
journal, June 2018

Boron arsenide phonon dispersion from inelastic x-ray scattering: Potential for ultrahigh thermal conductivity
journal, December 2016

Pair Spectra and "Edge" Emission in Gallium Phosphide
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Multimillimeter-sized cubic boron arsenide grown by chemical vapor transport via a tellurium tetraiodide transport agent
journal, June 2018

Thermal conductivity of isotopically modified single crystal diamond
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High thermal conductivity in cubic boron arsenide crystals
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Calculated electronic, transport, and related properties of zinc blende boron arsenide (zb-BAs)
journal, October 2016

Inter-impurity recombinations in semiconductors
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Electronic band structure and optical properties of boron arsenide
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High Thermal Conductivity in Boron Arsenide: From Prediction to Reality
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Boron arsenide heterostructures: lattice-matched heterointerfaces and strain effects on band alignments and mobility
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Mechanical properties of boron arsenide single crystal
journal, April 2019

Thermodynamic calculation and its experimental correlation with the growth process of boron arsenide single crystals
journal, October 2019

Effect of boron sources on the growth of boron arsenide single crystals by chemical vapor transport
journal, August 2019

Electronic structure of B _x Ga _1−x As alloys using hybrid functionals
journal, September 2019