Impurity-derived p-type conductivity in cubic boron arsenide

doi:https://doi.org/10.1063/1.5058134

Title: Impurity-derived p-type conductivity in cubic boron arsenide

Authors:

Lyons, John L. ^[1]; Varley, Joel B. ^[2]; Glaser, Evan R. ^[1]; Freitas, Jaime A. ^[1]; Culbertson, James C. ^[1];

^[3]; Gamage, Geethal Amila ^[3]; Sun, Haoran ^[3]; Ziyaee, Hamidreza ^[3]; Ren, Zhifeng ^[3]

Naval Research Lab. (NRL), Washington, DC (United States)
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Univ. of Houston, Houston, TX (United States)

Publication Date:: 2018-12-20

Research Org.:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC); US Department of the Navy, Office of Naval Research (ONR); USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1545270

Alternate Identifier(s):: OSTI ID: 1577944

Report Number(s):: LLNL-JRNL-792285
Journal ID: ISSN 0003-6951

Grant/Contract Number:: AC52-07NA27344; N00014-16-1-2436

Resource Type:: Journal Article: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 113; Journal Issue: 25; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Materials science

Citation Formats


                    Lyons, John L., Varley, Joel B., Glaser, Evan R., Freitas, Jaime A., Culbertson, James C., Tian, Fei, Gamage, Geethal Amila, Sun, Haoran, Ziyaee, Hamidreza, and Ren, Zhifeng. Impurity-derived p-type conductivity in cubic boron arsenide.  United States: N. p., 2018. 
        Web.  doi:10.1063/1.5058134.

Copy to clipboard


                    Lyons, John L., Varley, Joel B., Glaser, Evan R., Freitas, Jaime A., Culbertson, James C., Tian, Fei, Gamage, Geethal Amila, Sun, Haoran, Ziyaee, Hamidreza, & Ren, Zhifeng. Impurity-derived p-type conductivity in cubic boron arsenide.  United States.  https://doi.org/10.1063/1.5058134

Copy to clipboard


                    Lyons, John L., Varley, Joel B., Glaser, Evan R., Freitas, Jaime A., Culbertson, James C., Tian, Fei, Gamage, Geethal Amila, Sun, Haoran, Ziyaee, Hamidreza, and Ren, Zhifeng. Thu .  
        "Impurity-derived p-type conductivity in cubic boron arsenide".  United States.  https://doi.org/10.1063/1.5058134.  https://www.osti.gov/servlets/purl/1545270.

Copy to clipboard


                    
@article{osti_1545270,

  title        = {Impurity-derived p-type conductivity in cubic boron arsenide},

  author       = {Lyons, John L. and Varley, Joel B. and Glaser, Evan R. and Freitas, Jaime A. and Culbertson, James C. and Tian, Fei and Gamage, Geethal Amila and Sun, Haoran and Ziyaee, Hamidreza and Ren, Zhifeng},

  abstractNote = {},

  doi          = {10.1063/1.5058134},

  url          = {https://www.osti.gov/biblio/1545270},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 25,

  volume       = 113,

  place        = {United States},

  year         = {2018},

  month        = {12}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1063/1.5058134

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 14 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Unusual high thermal conductivity in boron arsenide bulk crystals
journal, July 2018

Tian, Fei; Song, Bai; Chen, Xi
Science, Vol. 361, Issue 6402
https://doi.org/10.1126/science.aat7932

Paramagnetic Resonance Absorption from Acceptors in Silicon
journal, October 1960

Feher, G.; Hensel, J. C.; Gere, E. A.
Physical Review Letters, Vol. 5, Issue 7
https://doi.org/10.1103/PhysRevLett.5.309

Simultaneously high electron and hole mobilities in cubic boron-V compounds: BP, BAs, and BSb
journal, August 2018

Liu, Te-Huan; Song, Bai; Meroueh, Laureen
Physical Review B, Vol. 98, Issue 8
https://doi.org/10.1103/PhysRevB.98.081203

Projector augmented-wave method
journal, December 1994

Blöchl, P. E.
Physical Review B, Vol. 50, Issue 24, p. 17953-17979
https://doi.org/10.1103/PhysRevB.50.17953

Seeded growth of boron arsenide single crystals with high thermal conductivity
journal, January 2018

Tian, Fei; Song, Bai; Lv, Bing
Applied Physics Letters, Vol. 112, Issue 3
https://doi.org/10.1063/1.5004200

Four-phonon scattering significantly reduces intrinsic thermal conductivity of solids
journal, October 2017

Feng, Tianli; Lindsay, Lucas; Ruan, Xiulin
Physical Review B, Vol. 96, Issue 16
https://doi.org/10.1103/PhysRevB.96.161201

Thermal and thermoelectric transport measurements of an individual boron arsenide microstructure
journal, May 2016

Kim, Jaehyun; Evans, Daniel A.; Sellan, Daniel P.
Applied Physics Letters, Vol. 108, Issue 20
https://doi.org/10.1063/1.4950970

Electrostatic interactions between charged defects in supercells
journal, December 2010

Freysoldt, Christoph; Neugebauer, Jörg; Van de Walle, Chris G.
physica status solidi (b), Vol. 248, Issue 5
https://doi.org/10.1002/pssb.201046289

Electronic structure of BAs and boride III-V alloys
journal, November 2000

Hart, Gus L. W.; Zunger, Alex
Physical Review B, Vol. 62, Issue 20
https://doi.org/10.1103/PhysRevB.62.13522

Fully Ab Initio Finite-Size Corrections for Charged-Defect Supercell Calculations
journal, January 2009

Freysoldt, Christoph; Neugebauer, Jörg; Van de Walle, Chris G.
Physical Review Letters, Vol. 102, Issue 1
https://doi.org/10.1103/PhysRevLett.102.016402

From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999

Kresse, G.; Joubert, D.
Physical Review B, Vol. 59, Issue 3, p. 1758-1775
https://doi.org/10.1103/PhysRevB.59.1758

The bond ionicity in ANB8−N compounds from maximally localized Wannier functions
journal, July 2015

Qteish, Abdallah
Journal of Physics and Chemistry of Solids, Vol. 82
https://doi.org/10.1016/j.jpcs.2015.02.011

First-principles calculations for point defects in solids
journal, March 2014

Freysoldt, Christoph; Grabowski, Blazej; Hickel, Tilmann
Reviews of Modern Physics, Vol. 86, Issue 1
https://doi.org/10.1103/RevModPhys.86.253

Commentary: The Materials Project: A materials genome approach to accelerating materials innovation
journal, July 2013

Jain, Anubhav; Ong, Shyue Ping; Hautier, Geoffroy
APL Materials, Vol. 1, Issue 1
https://doi.org/10.1063/1.4812323

Ab initio study of the effect of vacancies on the thermal conductivity of boron arsenide
journal, July 2016

Protik, Nakib Haider; Carrete, Jesús; Katcho, Nebil A.
Physical Review B, Vol. 94, Issue 4
https://doi.org/10.1103/PhysRevB.94.045207

Preparation and Properties of Boron Arsenide Films
journal, January 1974

Chu, T. L.; Hyslop, A. E.
Journal of The Electrochemical Society, Vol. 121, Issue 3
https://doi.org/10.1149/1.2401826

First-Principles Determination of Ultrahigh Thermal Conductivity of Boron Arsenide: A Competitor for Diamond?
journal, July 2013

Lindsay, L.; Broido, D. A.; Reinecke, T. L.
Physical Review Letters, Vol. 111, Issue 2, Article No. 025901
https://doi.org/10.1103/PhysRevLett.111.025901

Antisite Pairs Suppress the Thermal Conductivity of BAs
journal, September 2018

Zheng, Qiang; Polanco, Carlos A.; Du, Mao-Hua
Physical Review Letters, Vol. 121, Issue 10
https://doi.org/10.1103/PhysRevLett.121.105901

Experimental observation of high thermal conductivity in boron arsenide
journal, July 2018

Kang, Joon Sang; Li, Man; Wu, Huan
Science, Vol. 361, Issue 6402
https://doi.org/10.1126/science.aat5522

Electron paramagnetic resonance of boron acceptors in isotopically purified silicon
journal, April 2010

Tezuka, H.; Stegner, A. R.; Tyryshkin, A. M.
Physical Review B, Vol. 81, Issue 16
https://doi.org/10.1103/PhysRevB.81.161203

The chips are down for Moore’s law
journal, February 2016

Waldrop, M. Mitchell
Nature, Vol. 530, Issue 7589
https://doi.org/10.1038/530144a

Erratum: “Hybrid functionals based on a screened Coulomb potential” [J. Chem. Phys. 118, 8207 (2003)]
journal, June 2006

Heyd, Jochen; Scuseria, Gustavo E.; Ernzerhof, Matthias
The Journal of Chemical Physics, Vol. 124, Issue 21
https://doi.org/10.1063/1.2204597

Descriptor-Based Approach for the Prediction of Cation Vacancy Formation Energies and Transition Levels
journal, October 2017

Varley, Joel B.; Samanta, Amit; Lordi, Vincenzo
The Journal of Physical Chemistry Letters, Vol. 8, Issue 20
https://doi.org/10.1021/acs.jpclett.7b02333

Point defects and dopants of boron arsenide from first-principles calculations: Donor compensation and doping asymmetry
journal, November 2018

Chae, S.; Mengle, K.; Heron, J. T.
Applied Physics Letters, Vol. 113, Issue 21
https://doi.org/10.1063/1.5062267

Experimental study of the proposed super-thermal-conductor: BAs
journal, February 2015

Lv, Bing; Lan, Yucheng; Wang, Xiqu
Applied Physics Letters, Vol. 106, Issue 7
https://doi.org/10.1063/1.4913441

Synthesis and Characterization of a p-Type Boron Arsenide Photoelectrode
journal, June 2012

Wang, Shijun; Swingle, Sarah F.; Ye, Heechang
Journal of the American Chemical Society, Vol. 134, Issue 27
https://doi.org/10.1021/ja301765v

Gas-pressure chemical vapor transport growth of millimeter-sized c-BAs single crystals with moderate thermal conductivity
journal, June 2018

Xing, Jie; Glaser, Evan R.; Song, Bai
Applied Physics Letters, Vol. 112, Issue 24
https://doi.org/10.1063/1.5034787

Boron arsenide phonon dispersion from inelastic x-ray scattering: Potential for ultrahigh thermal conductivity
journal, December 2016

Ma, Hao; Li, Chen; Tang, Shixiong
Physical Review B, Vol. 94, Issue 22
https://doi.org/10.1103/PhysRevB.94.220303

Pair Spectra and "Edge" Emission in Gallium Phosphide
journal, January 1964

Thomas, D. G.; Gershenzon, M.; Trumbore, F. A.
Physical Review, Vol. 133, Issue 1A
https://doi.org/10.1103/PhysRev.133.A269

Multimillimeter-sized cubic boron arsenide grown by chemical vapor transport via a tellurium tetraiodide transport agent
journal, June 2018

Xing, Jie; Chen, Xi; Zhou, Yuanyuan
Applied Physics Letters, Vol. 112, Issue 26
https://doi.org/10.1063/1.5038025

Thermal conductivity of isotopically modified single crystal diamond
journal, June 1993

Wei, Lanhua; Kuo, P. K.; Thomas, R. L.
Physical Review Letters, Vol. 70, Issue 24
https://doi.org/10.1103/PhysRevLett.70.3764

High thermal conductivity in cubic boron arsenide crystals
journal, July 2018

Li, Sheng; Zheng, Qiye; Lv, Yinchuan
Science, Vol. 361, Issue 6402
https://doi.org/10.1126/science.aat8982

Calculated electronic, transport, and related properties of zinc blende boron arsenide (zb-BAs)
journal, October 2016

Nwigboji, Ifeanyi H.; Malozovsky, Yuriy; Franklin, Lashounda
Journal of Applied Physics, Vol. 120, Issue 14
https://doi.org/10.1063/1.4964421

Inter-impurity recombinations in semiconductors
journal, January 1973

Dean, P. J.
Progress in Solid State Chemistry, Vol. 8
https://doi.org/10.1016/0079-6786(73)90004-6

Works referencing / citing this record:

Electronic band structure and optical properties of boron arsenide
journal, May 2019

Buckeridge, J.; Scanlon, D. O.
Physical Review Materials, Vol. 3, Issue 5
https://doi.org/10.1103/physrevmaterials.3.051601

High Thermal Conductivity in Boron Arsenide: From Prediction to Reality
journal, April 2019

Tian, Fei; Ren, Zhifeng
Angewandte Chemie, Vol. 131, Issue 18
https://doi.org/10.1002/ange.201812112

Boron arsenide heterostructures: lattice-matched heterointerfaces and strain effects on band alignments and mobility
journal, January 2020

Bushick, Kyle; Chae, Sieun; Deng, Zihao
npj Computational Materials, Vol. 6, Issue 1
https://doi.org/10.1038/s41524-019-0270-4

Mechanical properties of boron arsenide single crystal
journal, April 2019

Tian, Fei; Luo, Kun; Xie, Chenlong
Applied Physics Letters, Vol. 114, Issue 13
https://doi.org/10.1063/1.5093289

Thermodynamic calculation and its experimental correlation with the growth process of boron arsenide single crystals
journal, October 2019

Ziyaee, Hamidreza; Gamage, Geethal Amila; Sun, Haoran
Journal of Applied Physics, Vol. 126, Issue 15
https://doi.org/10.1063/1.5110890

Effect of boron sources on the growth of boron arsenide single crystals by chemical vapor transport
journal, August 2019

Gamage, Geethal Amila; Sun, Haoran; Ziyaee, Hamidreza
Applied Physics Letters, Vol. 115, Issue 9
https://doi.org/10.1063/1.5111732

Electronic structure of B _x Ga _1−x As alloys using hybrid functionals
journal, September 2019

Gulyas, Istvan; Kudrawiec, Robert; Wistey, Mark A.
Journal of Applied Physics, Vol. 126, Issue 9
https://doi.org/10.1063/1.5111992

Similar records in OSTI.GOV collections:

Interfacial Impurities and Their Electronic Signatures in High-Voltage Regrown Nonpolar m-Plane GaN Vertical p–n Diodes

Journal Article Aragon, Andrew ; Monavarian, Morteza ; Stricklin, Isaac ; ... - Physica Status Solidi. A, Applications and Materials Science

Impacts of silicon, carbon, and oxygen interfacial impurities on the performance of high-voltage vertical GaN-based p–n diodes are investigated. The results indicate that moderate levels (≈5 × 10 ¹⁷ cm ^-3) of all interfacial impurities lead to reverse blocking voltages (V _b) greater than 200 V at 1 μA cm ^-2 and forward leakage of less than 1 µA cm ^-2 at 1.7 V. At higher interfacial impurity levels, the performance of the diodes becomes compromised. Herein, it is concluded that each impurity has a different effect on the device performance. For example, a high carbon spike at the junctionmore »« less
https://doi.org/10.1002/pssa.201900757

Full Text Available
Complete genome sequence of Bacteroides helcogenes type strain (P 36-108 ^T)

Journal Article Pati, Amrita ; Gronow, Sabine ; Zeytun, Ahmet ; ... - Standards in Genomic Sciences

Bacteroides helcogenes Benno et al. 1983 is of interest because of its isolated phylogenetic location and, although it has been found in pig feces and is known to be pathogenic for pigs, occurrence of this bacterium is rare and it does not cause significant damage in intensive animal husbandry. The genome of B. helcogenes P 36-108T is already the fifth completed and published type strain genome from the genus Bacteroides in the family Bacteroidaceae. The 3,998,906 bp long genome with its 3,353 protein-coding and 83 RNA genes consists of one circular chromosome and is a part of the Genomic Encyclopediamore » of Bacteria and Archaea project.« less
Cited by 6
https://doi.org/10.4056/sigs.1513795

Full Text Available
Measurement of Heavy Ion Irradiation Induced In-Plane Strain in Patterned Face-Centered-Cubic Metal Films: An in Situ Study

Journal Article Yu, K. Y. ; Chen, Y. ; Li, J. ; ... - Nano Letters

Nanocrystalline Ag, Cu, and Ni thin films and their coarse grained counterparts are patterned in this paper using focused ion beam and then irradiated by Kr ions within an electron microscope at room temperature. Irradiation induced in-plane strain of the films is measured by tracking the location of nanosized holes. The magnitude of the strain in all specimens is linearly dose-dependent and the strain rates of nanocrystalline metals are significantly greater as compared to that of the coarse grained metals. Finally, real-time microscopic observation suggests that substantial grain boundary migration and grain rotation are responsible for the significant in-plane strain.
Cited by 4
https://doi.org/10.1021/acs.nanolett.6b03195

Full Text Available
Fullerene derivative induced morphology of bulk heterojunction blends: PIPCP:PC ₆₁ BM

Journal Article Huang, Tzu-Yen ; Yan, Hongping ; Abdelsamie, Maged ; ... - RSC Advances

The performance of organic solar cells (OSCs) depends crucially on the morphology in bulk heterojunctions (BHJs), including the degree of crystallinity of the polymer and the amount of each material phase: aggregated donor, aggregated acceptor, and molecular mixed donor:acceptor phase. In this paper, we report the BHJ morphology of as-cast blend films incorporating the polymer PIPCP as the donor and [6,6]-phenyl-C ₆₁-butyric acid methyl ester (PC ₆₁BM) as the acceptor. Tracking the scattering intensity of PC ₆₁BM as a function of PC ₆₁BM concentration shows that PC ₆₁BM aggregates into donor-rich domains and there is little to no phase wheremore »« less
Cited by 2
https://doi.org/10.1039/C8RA10488C
Effect of impurities on the photovoltaic behavior of solar-grade silicon. I. The role of boron and phosphorous primary impurities in p-type single-crystal silicon

Journal Article Pizzini, S ; Calligarich, C - J. Electrochem. Soc.; (United States)

The electrical and photovoltaic properties of partially compensated p-type silicon samples have been investigated in order to understand the influence of the contemporaneous presence of donors and acceptors on the behavior of majority and minority carriers. It has been shown that the majority carrier properties are only slightly influenced by the presence of donors in p-type samples and that the minority carrier properties depend on the excess acceptor concentration up to an excess donor concentration close to 5 x 10 to the 16th at./cu cm. A theoretical explanation of these features has been proposed, on the base of the Shockley-Read-Hallmore »« less
https://doi.org/10.1149/1.2116033

Similar Records

Title: Impurity-derived p-type conductivity in cubic boron arsenide

Citation Formats

Unusual high thermal conductivity in boron arsenide bulk crystals journal, July 2018

Paramagnetic Resonance Absorption from Acceptors in Silicon journal, October 1960

Simultaneously high electron and hole mobilities in cubic boron-V compounds: BP, BAs, and BSb journal, August 2018

Projector augmented-wave method journal, December 1994

Seeded growth of boron arsenide single crystals with high thermal conductivity journal, January 2018

Four-phonon scattering significantly reduces intrinsic thermal conductivity of solids journal, October 2017

Thermal and thermoelectric transport measurements of an individual boron arsenide microstructure journal, May 2016

Electrostatic interactions between charged defects in supercells journal, December 2010

Electronic structure of BAs and boride III-V alloys journal, November 2000

Fully Ab Initio Finite-Size Corrections for Charged-Defect Supercell Calculations journal, January 2009

From ultrasoft pseudopotentials to the projector augmented-wave method journal, January 1999

The bond ionicity in ANB8−N compounds from maximally localized Wannier functions journal, July 2015

First-principles calculations for point defects in solids journal, March 2014

Commentary: The Materials Project: A materials genome approach to accelerating materials innovation journal, July 2013

Ab initio study of the effect of vacancies on the thermal conductivity of boron arsenide journal, July 2016

Preparation and Properties of Boron Arsenide Films journal, January 1974

First-Principles Determination of Ultrahigh Thermal Conductivity of Boron Arsenide: A Competitor for Diamond? journal, July 2013

Antisite Pairs Suppress the Thermal Conductivity of BAs journal, September 2018

Experimental observation of high thermal conductivity in boron arsenide journal, July 2018

Electron paramagnetic resonance of boron acceptors in isotopically purified silicon journal, April 2010

The chips are down for Moore’s law journal, February 2016

Erratum: “Hybrid functionals based on a screened Coulomb potential” [J. Chem. Phys. 118, 8207 (2003)] journal, June 2006

Descriptor-Based Approach for the Prediction of Cation Vacancy Formation Energies and Transition Levels journal, October 2017

Point defects and dopants of boron arsenide from first-principles calculations: Donor compensation and doping asymmetry journal, November 2018

Experimental study of the proposed super-thermal-conductor: BAs journal, February 2015

Synthesis and Characterization of a p-Type Boron Arsenide Photoelectrode journal, June 2012

Gas-pressure chemical vapor transport growth of millimeter-sized c-BAs single crystals with moderate thermal conductivity journal, June 2018

Boron arsenide phonon dispersion from inelastic x-ray scattering: Potential for ultrahigh thermal conductivity journal, December 2016

Pair Spectra and "Edge" Emission in Gallium Phosphide journal, January 1964

Multimillimeter-sized cubic boron arsenide grown by chemical vapor transport via a tellurium tetraiodide transport agent journal, June 2018

Thermal conductivity of isotopically modified single crystal diamond journal, June 1993

High thermal conductivity in cubic boron arsenide crystals journal, July 2018

Calculated electronic, transport, and related properties of zinc blende boron arsenide (zb-BAs) journal, October 2016

Inter-impurity recombinations in semiconductors journal, January 1973

Electronic band structure and optical properties of boron arsenide journal, May 2019

High Thermal Conductivity in Boron Arsenide: From Prediction to Reality journal, April 2019

Boron arsenide heterostructures: lattice-matched heterointerfaces and strain effects on band alignments and mobility journal, January 2020

Mechanical properties of boron arsenide single crystal journal, April 2019

Thermodynamic calculation and its experimental correlation with the growth process of boron arsenide single crystals journal, October 2019

Effect of boron sources on the growth of boron arsenide single crystals by chemical vapor transport journal, August 2019

Electronic structure of B x Ga 1−x As alloys using hybrid functionals journal, September 2019

Unusual high thermal conductivity in boron arsenide bulk crystals
journal, July 2018

Paramagnetic Resonance Absorption from Acceptors in Silicon
journal, October 1960

Simultaneously high electron and hole mobilities in cubic boron-V compounds: BP, BAs, and BSb
journal, August 2018

Projector augmented-wave method
journal, December 1994

Seeded growth of boron arsenide single crystals with high thermal conductivity
journal, January 2018

Four-phonon scattering significantly reduces intrinsic thermal conductivity of solids
journal, October 2017

Thermal and thermoelectric transport measurements of an individual boron arsenide microstructure
journal, May 2016

Electrostatic interactions between charged defects in supercells
journal, December 2010

Electronic structure of BAs and boride III-V alloys
journal, November 2000

Fully Ab Initio Finite-Size Corrections for Charged-Defect Supercell Calculations
journal, January 2009

From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999

The bond ionicity in ANB8−N compounds from maximally localized Wannier functions
journal, July 2015

First-principles calculations for point defects in solids
journal, March 2014

Commentary: The Materials Project: A materials genome approach to accelerating materials innovation
journal, July 2013

Ab initio study of the effect of vacancies on the thermal conductivity of boron arsenide
journal, July 2016

Preparation and Properties of Boron Arsenide Films
journal, January 1974

First-Principles Determination of Ultrahigh Thermal Conductivity of Boron Arsenide: A Competitor for Diamond?
journal, July 2013

Antisite Pairs Suppress the Thermal Conductivity of BAs
journal, September 2018

Experimental observation of high thermal conductivity in boron arsenide
journal, July 2018

Electron paramagnetic resonance of boron acceptors in isotopically purified silicon
journal, April 2010

The chips are down for Moore’s law
journal, February 2016

Erratum: “Hybrid functionals based on a screened Coulomb potential” [J. Chem. Phys. 118, 8207 (2003)]
journal, June 2006

Descriptor-Based Approach for the Prediction of Cation Vacancy Formation Energies and Transition Levels
journal, October 2017

Point defects and dopants of boron arsenide from first-principles calculations: Donor compensation and doping asymmetry
journal, November 2018

Experimental study of the proposed super-thermal-conductor: BAs
journal, February 2015

Synthesis and Characterization of a p-Type Boron Arsenide Photoelectrode
journal, June 2012

Gas-pressure chemical vapor transport growth of millimeter-sized c-BAs single crystals with moderate thermal conductivity
journal, June 2018

Boron arsenide phonon dispersion from inelastic x-ray scattering: Potential for ultrahigh thermal conductivity
journal, December 2016

Pair Spectra and "Edge" Emission in Gallium Phosphide
journal, January 1964

Multimillimeter-sized cubic boron arsenide grown by chemical vapor transport via a tellurium tetraiodide transport agent
journal, June 2018

Thermal conductivity of isotopically modified single crystal diamond
journal, June 1993

High thermal conductivity in cubic boron arsenide crystals
journal, July 2018

Calculated electronic, transport, and related properties of zinc blende boron arsenide (zb-BAs)
journal, October 2016

Inter-impurity recombinations in semiconductors
journal, January 1973

Electronic band structure and optical properties of boron arsenide
journal, May 2019

High Thermal Conductivity in Boron Arsenide: From Prediction to Reality
journal, April 2019

Boron arsenide heterostructures: lattice-matched heterointerfaces and strain effects on band alignments and mobility
journal, January 2020

Mechanical properties of boron arsenide single crystal
journal, April 2019

Thermodynamic calculation and its experimental correlation with the growth process of boron arsenide single crystals
journal, October 2019

Effect of boron sources on the growth of boron arsenide single crystals by chemical vapor transport
journal, August 2019

Electronic structure of B _x Ga _1−x As alloys using hybrid functionals
journal, September 2019