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U.S. Department of Energy
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Impact of Linearity and Write Noise of Analog Resistive Memory Devices in a Neural Algorithm Accelerator.

Conference ·
OSTI ID:1470913

Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1470913
Report Number(s):
SAND2017-9637C; 656844
Country of Publication:
United States
Language:
English

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