Impact of Linearity and Write Noise of Analog Resistive Memory Devices in a Neural Algorithm Accelerator.
Conference
·
OSTI ID:1470913
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1470913
- Report Number(s):
- SAND2017-9637C; 656844
- Resource Relation:
- Conference: Proposed for presentation at the 2017 IEEE International Conference on Rebooting Computing (ICRC) held November 6 - September 10, 2017 in Washington, DC.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Impact of Linearity and Write Noise of Analog Resistive Memory Devices in a Neural Algorithm Accelerator.
Impact of Linearity and Write Noise of Analog Resistive Memory Devices in a Neural Algorithm Accelerator
Resistive Memory Device Requirements for a Neural Algorithm Accelerator.
Conference
·
Wed Nov 01 00:00:00 EDT 2017
·
OSTI ID:1470913
+5 more
Impact of Linearity and Write Noise of Analog Resistive Memory Devices in a Neural Algorithm Accelerator
Journal Article
·
Fri Dec 01 00:00:00 EST 2017
· Conference Proceedings - IEEE International Conference on Rebooting Computing (ICRC)
·
OSTI ID:1470913
+6 more
Resistive Memory Device Requirements for a Neural Algorithm Accelerator.
Conference
·
Fri Jul 01 00:00:00 EDT 2016
·
OSTI ID:1470913
+5 more