Reproducible growth and application of AlAs/GaAs double barrier resonant tunneling diodes

Journal Article · Sat May 01 00:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586900· OSTI ID:147055

Mars, D E; Yang, L; Tan, M R.T. ^[1]

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1. Hewlett-Packard Lab., Palo Alto, CA (United States); and others

More than 15 AlAs/GaAs double barrier resonant tunneling diode wafers of nominally identical structure were grown and excellent reproducibility in the I-V characteristics was found. The peak current density varied by less than 10% within a wafer and less than 20% from wafer to wafer. A variation of 20% in the peak current density corresponds to an average variation of 0.3 monolayers in the thickness of the AlAs barriers. An internal switching time of 6 ps was measured using electro-optic sampling and a circuit using these devices operated at more than 50 GHz. 8 refs., 3 figs., 2 tabs.

• OSTI ID: 147055
• Report Number(s): CONF-9210296-; ISSN 0734-211X; TRN: 95:007540-0063
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 11, Issue 3; Conference: North American conference on molecular beam epitaxy, Ontario (Canada), 12-14 Oct 1992; Other Information: PBD: May-Jun 1993
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
PHYSICAL PROPERTIES
ALUMINIUM ARSENIDES
MOLECULAR BEAM EPITAXY
CURRENT DENSITY
THICKNESS
CRYSTAL GROWTH
SEMICONDUCTOR DIODES