Optimum growth temperature determination for GaInSb/InAs strained layer superlattices

Journal Article · Sat May 01 00:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586766· OSTI ID:147027

Davis, J L; Wagner, R J; Waterman, J R ^[1]

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1. Naval Research Lab., Washington, DC (United States); and others

To determine the optimum growth temperature for GaInSb/InAs strained layer superlattices (SLS) a series of SLS was grown over the temperature range 357-433 {degrees}C. Temperatures were estimated by determining the absorption spectrum of the GaAs substrate, hence its band gap, and thus its temperature. SLS were evaluated by single crystal x-ray diffraction and interband magnetoabsorption (IMA) measurements. X-ray spectra showed as many as eight peaks due to the superlattice. The quality of the superlattices as indicated by the x-ray data had a well defined maximum between 390 and 410 {degrees}C. IMA measurements indicated band gaps from 85 to 154 meV. 15 refs., 2 figs., 1 tab.

• OSTI ID: 147027
• Report Number(s): CONF-9210296-; ISSN 0734-211X; TRN: 95:007540-0035
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 11, Issue 3; Conference: North American conference on molecular beam epitaxy, Ontario (Canada), 12-14 Oct 1992; Other Information: PBD: May-Jun 1993
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ANTIMONIDES
CRYSTAL GROWTH
INDIUM ANTIMONIDES
INDIUM ARSENIDES
SUPERLATTICES
X-RAY DIFFRACTION
X-RAY SPECTRA
TEMPERATURE DEPENDENCE
GRADED BAND GAPS