Minority carrier lifetimes in very long-wave infrared InAs/GaInSb superlattices

Journal Article · Fri Jan 01 00:00:00 EST 2016 · Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics

DOI:https://doi.org/10.1116/1.4941132· OSTI ID:1239382

Olson, Benjamin Varberg ^[1]; Haugan, Heather J. ^[2]; Brown, Gail J. ^[2]; Kadlec, Emil Andrew ^[1]; Kim, Jin K. ^[1]; Shaner, Eric A. ^[1]

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1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
2. Air Force Research Lab., Wright-Patterson Air Force Base, OH (United States)

Here, significantly improved carrier lifetimes in very-long wave infrared InAs/GaInSb superlattice(SL) absorbers are demonstrated by using time-resolved microwave reflectance (TMR) measurements. A nominal 47.0 Å InAs/21.5 Å Ga_0.75In_0.25Sb SLstructure that produces an approximately 25 μm response at 10 K has a minority carrier lifetime of 140 ± 20 ns at 18 K, which is markedly long for SL absorber with such a narrow bandgap. This improvement is attributed to the strain-engineered ternary design. Such SL employs a shorter period with reduced gallium in order to achieve good optical absorption and epitaxial advantages, which ultimately leads to the improvements in the minority carrier lifetime by reducing Shockley–Read–Hall (SRH) defects. By analyzing the temperature-dependence of TMR decay data, the recombination mechanisms and trap states that currently limit the performance of this SL absorber have been identified. The results show a general decrease in the long-decay lifetime component, which is dominated by the SRH recombination at temperature below ~30 K, and by Auger recombination at temperatures above ~45 K.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
• Grant/Contract Number: AC04-94AL85000
• OSTI ID: 1239382
• Alternate ID(s): OSTI ID: 1421118
• Report Number(s): SAND2016-0487J; 618675
• Journal Information: Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics, Journal Name: Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics Journal Issue: 2 Vol. 34; ISSN 2166-2746; ISSN JVTBD9
• Country of Publication: United States
• Language: English

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36 MATERIALS SCIENCE