Quantum Hall edge states in topological insulator nanoribbons

Pertsova, A.; Canali, C. M.; MacDonald, A. H.

doi:10.1103/physrevb.94.121409

Quantum Hall edge states in topological insulator nanoribbons

Journal Article · Mon Sep 26 00:00:00 UTC 2016 · Physical Review B

DOI:https://doi.org/10.1103/physrevb.94.121409· OSTI ID:1470265

Pertsova, A. ^[1]; Canali, C. M. ^[1]; MacDonald, A. H. ^[2]

Linnæus University, Kalmar (Sweden)
Univ. of Texas, Austin, TX (United States)

We present a microscopic theory of the chiral one-dimensional electron gas system localized on the sidewalls of magnetically doped Bi₂Se₃-family topological insulator nanoribbons in the quantum anomalous Hall effect (QAHE) regime. Our theory is based on a simple continuum model of sidewall states whose parameters are extracted from detailed ribbon and film geometry tight-binding model calculations. In contrast to the familiar case of the quantum Hall effect in semiconductor quantum wells, the number of microscopic chiral channels depends simply and systematically on the ribbon thickness and on the position of the Fermi level within the surface state gap. Further, we use our theory to interpret recent transport experiments that exhibit nonzero longitudinal resistance in samples with accurately quantized Hall conductances.

View Accepted Manuscript (DOE)

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Spins and Heat in Nanoscale Electronic Systems (SHINES)

Sponsoring Organization:: Swedish Research Council (VR); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES); Welch Foundation

Grant/Contract Number:: SC0012670

OSTI ID:: 1470265

Alternate ID(s):: OSTI ID: 1326863

Journal Information:: Physical Review B, Journal Name: Physical Review B Journal Issue: 12 Vol. 94; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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