Ordering mechanism and quantum anomalous Hall effect of magnetically doped topological insulators

Kim, Jeongwoo; Jhi, Seung-Hoon; MacDonald, A. H.; Wu, Ruqian

doi:10.1103/physrevb.96.140410

Ordering mechanism and quantum anomalous Hall effect of magnetically doped topological insulators

Journal Article · Wed Oct 25 00:00:00 EDT 2017 · Physical Review B

DOI:https://doi.org/10.1103/physrevb.96.140410· OSTI ID:1470134

Kim, Jeongwoo ^[1]; Jhi, Seung-Hoon ^[2]; MacDonald, A. H. ^[3]; Wu, Ruqian ^[1]

Univ. of California, Irvine, CA (United States)
Pohang Univ. of Science and Technology (POSTECH) (Korea)
Univ. of Texas, Austin, TX (United States)

We investigate magnetic ordering and the quantum anomalous Hall effect (QAHE) in Cr-doped topological insulators using systematic first-principles calculations, explaining the mechanism responsible for ferromagnetic order and the reason why Sb₂Te₃ is a better QAHE host than Bi₂Se₃ or Bi₂Te₃. In this work, we conclude that these magnetic topological insulators have relatively long-range exchange interactions within quintuple layers and weak interactions between quintuple layers. Our analyses for the spin splitting of the topological surface states suggest that the temperature at which the QAHE occurs in these materials can be enhanced significantly by Mo-Cr co-doping.

View Accepted Manuscript (DOE)

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Spins and Heat in Nanoscale Electronic Systems (SHINES)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Research Foundation of Korea (NRF); Welch Foundation

Grant/Contract Number:: SC0012670

OSTI ID:: 1470134

Alternate ID(s):: OSTI ID: 1404740

Journal Information:: Physical Review B, Journal Name: Physical Review B Journal Issue: 14 Vol. 96; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Magnetic-impurity-induced modifications to ultrafast carrier dynamics in the ferromagnetic topological insulators Sb _{2− x} V _x Te ₃ Sumida, K.; Kakoki, M.; Reimann, J. New Journal of Physics, Vol. 21, Issue 9 https://doi.org/10.1088/1367-2630/ab3ac6	journal	September 2019
Comparing magnetic ground-state properties of the V- and Cr-doped topological insulator ( Bi , Sb ) 2 Te 3 Tcakaev, A.; Zabolotnyy, V. B.; Green, R. J. Physical Review B, Vol. 101, Issue 4 https://doi.org/10.1103/physrevb.101.045127	journal	January 2020
Systematics of electronic and magnetic properties in the transition metal doped Sb 2 Te 3 quantum anomalous Hall platform Islam, M. F.; Canali, C. M.; Pertsova, A. Physical Review B, Vol. 97, Issue 15 https://doi.org/10.1103/physrevb.97.155429	journal	April 2018
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Systematics of electronic and magnetic properties in the transition metal doped $Sb_{2}Te_{3}$ quantum anomalous Hall platform Islam, M. F.; Canali, C. M.; Pertsova, A. Deutsches Elektronen-Synchrotron, DESY, Hamburg https://doi.org/10.3204/pubdb-2019-01840	text	January 2018
Carrier free long-range magnetism in Mo doped one quintuple layer Bi2Te3 and Sb2Te3 Zhang, Xiaodong; Zhu, Junyi arXiv https://doi.org/10.48550/arxiv.1907.13282	text	January 2019

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