Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition

Lee, S. C.; Youngblood, N.; Jiang, Y. B.; Peterson, E. J.; Stark, C. J. M.; Detchprohm, T.; Wetzel, C.; Brueck, S. R. J.

doi:10.1063/1.4936772

Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition

Journal Article · Mon Dec 07 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4936772· OSTI ID:1468467

Lee, S. C. ^[1]; Youngblood, N. ^[2]; Jiang, Y. B. ^[2]; Peterson, E. J. ^[2]; Stark, C. J. M. ^[3]; Detchprohm, T. ^[3]; ^[3]; Brueck, S. R. J. ^[2]

Univ. of New Mexico, Albuquerque, NM (United States); None
Univ. of New Mexico, Albuquerque, NM (United States)
Rensselaer Polytechnic Inst., Troy, NY (United States)

Here, the incorporation of In on the non-polar, piezoelectric-free (001) facet of cubic (c-) GaN epitaxially grown over a Si(001) substrate by metal-organic vapor phase epitaxy is reported. Relying on a hexagonal (h-) to c-phase transformation during epitaxy on an 800 nm-wide, Si(111)-faceted v-groove patterned into the substrate, the GaN epilayer at cross sectional view retains a triangular c-phase inside a chevron-shaped h-phase that results in a top surface bounded by a (001) facet parallel to Si(001) at the center and (11¯01) facets at both edges. A stack of five, ~3 nm-thick, In_xGa_1–xN/GaN quantum wells (QWs) was deposited on the double-phased top surface. The c-phase region up to the QWs keeps extremely small misfit (~0.002) to the fully relaxed h-GaN underneath it and is in tensile stress implying undefected by the h-c phase interface. Lastly, the In incorporation on a strained non-polar (001) of c-GaN is comparable with that on totally relaxed semi-polar (11¯01) of h-GaN without noticeable adatom migration across the phase boundary, and sufficient to provide the room-temperature green emission at 496 nm from the c-In_xGa_1–xN/GaN QWs on Si(001) in photoluminescence.

View Accepted Manuscript (DOE)

Research Organization:: Rensselaer Polytechnic Inst., Troy, NY (United States)

Sponsoring Organization:: USDOE; USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: EE0000627

OSTI ID:: 1468467

Alternate ID(s):: OSTI ID: 1228438

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 107; ISSN APPLAB; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (18)

Method for measurement of lattice parameter of cubic GaN layers on GaAs (001) Zheng, X. H.; Wang, Y. T.; Feng, Z. H. Journal of Crystal Growth, Vol. 250, Issue 3-4 https://doi.org/10.1016/S0022-0248(02)02465-X	journal	April 2003
Optical properties of (11¯01) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates Chiu, Ching-Hsueh; Lin, Da-Wei; Lin, Chien-Chung Journal of Crystal Growth, Vol. 318, Issue 1 https://doi.org/10.1016/j.jcrysgro.2010.10.054	journal	March 2011
Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon Lei, T.; Fanciulli, M.; Molnar, R. J. Applied Physics Letters, Vol. 59, Issue 8 https://doi.org/10.1063/1.106309	journal	August 1991
Spatial phase separation of GaN selectively grown on a nanoscale faceted Si surface Lee, S. C.; Sun, X. Y.; Hersee, S. D. Applied Physics Letters, Vol. 84, Issue 12 https://doi.org/10.1063/1.1687456	journal	March 2004
Auger recombination in InGaN measured by photoluminescence Shen, Y. C.; Mueller, G. O.; Watanabe, S. Applied Physics Letters, Vol. 91, Issue 14 https://doi.org/10.1063/1.2785135	journal	October 2007
Origin of efficiency droop in GaN-based light-emitting diodes Kim, Min-Ho; Schubert, Martin F.; Dai, Qi Applied Physics Letters, Vol. 91, Issue 18 https://doi.org/10.1063/1.2800290	journal	October 2007
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells Zhao, Yuji; Yan, Qimin; Huang, Chia-Yen Applied Physics Letters, Vol. 100, Issue 20 https://doi.org/10.1063/1.4719100	journal	May 2012
Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold Baloch, Kamal H.; Johnston-Peck, Aaron C.; Kisslinger, Kim Applied Physics Letters, Vol. 102, Issue 19 https://doi.org/10.1063/1.4807122	journal	May 2013
Optical studies of strain and defect distribution in semipolar (11¯01) GaN on patterned Si substrates Izyumskaya, N.; Zhang, F.; Okur, S. Journal of Applied Physics, Vol. 114, Issue 11 https://doi.org/10.1063/1.4821343	journal	September 2013
Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100) Stark, Christoph J. M.; Detchprohm, Theeradetch; Lee, S. C. Applied Physics Letters, Vol. 103, Issue 23 https://doi.org/10.1063/1.4841555	journal	December 2013
Indium clustering in a -plane InGaN quantum wells as evidenced by atom probe tomography Tang, Fengzai; Zhu, Tongtong; Oehler, Fabrice Applied Physics Letters, Vol. 106, Issue 7 https://doi.org/10.1063/1.4909514	journal	February 2015
Electronic structure of zinc-blende-wurtzite interfaces: ZnS-ZnS (111-0001) and ZnSe-ZnSe (111-0001) Northrup, John E.; Ihm, J.; Cohen, Marvin L. Physical Review B, Vol. 22, Issue 4 https://doi.org/10.1103/PhysRevB.22.2060	journal	August 1980
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting Krames, Michael R.; Shchekin, Oleg B.; Mueller-Mach, Regina Journal of Display Technology, Vol. 3, Issue 2, p. 160-175 https://doi.org/10.1109/JDT.2007.895339	journal	June 2007
Nanoscale spatial phase modulation of GaN on a V-grooved Si Substrate-cubic phase GaN on Si(001) for monolithic integration Lee, S. C.; Pattada, B.; Hersee, S. D. IEEE Journal of Quantum Electronics, Vol. 41, Issue 4 https://doi.org/10.1109/JQE.2005.843605	journal	April 2005
Relaxation Process of the Thermal Strain in the GaN/α-Al ₂ O ₃ Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain Detchprohm, Theeradetch; Hiramatsu, Kazumasa; Itoh, Kenji Japanese Journal of Applied Physics, Vol. 31, Issue Part 2, No. 10B https://doi.org/10.1143/JJAP.31.L1454	journal	October 1992
Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD Chen, Yung-Sheng; Liao, Che-Hao; Kuo, Chie-Tong Nanoscale Research Letters, Vol. 9, Issue 1 https://doi.org/10.1186/1556-276X-9-334	journal	January 2014
Enhanced near-green light emission from InGaN quantum wells by use of tunable plasmonic resonances in silver nanoparticle arrays Henson, John; Dimakis, Emmanouil; DiMaria, Jeff Optics Express, Vol. 18, Issue 20 https://doi.org/10.1364/OE.18.021322	journal	January 2010
Fabrication of InGaN/GaN Multiple Quantum Wells on (11̄01) GaN Tanikawa, Tomoyuki; Sano, Tomotaka; Kushimoto, Maki Japanese Journal of Applied Physics, Vol. 52, Issue 8S https://doi.org/10.7567/JJAP.52.08JC05	journal	August 2013

Cited By (2)

Initial stage of cubic GaN for heterophase epitaxial growth induced on nanoscale v-grooved Si(001) in metal-organic vapor-phase epitaxy Lee, S. C.; Jiang, Y-B; Durniak, M. Nanotechnology, Vol. 30, Issue 2 https://doi.org/10.1088/1361-6528/aae9a2	journal	November 2018
Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes Zhao, Yuji; Fu, Houqiang; Wang, George T. Advances in Optics and Photonics, Vol. 10, Issue 1 https://doi.org/10.1364/aop.10.000246	journal	January 2018

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