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Title: Bonded thin film lithium niobate modulator on a silicon photonics platform exceeding 100 GHz 3-dB electrical modulation bandwidth

Journal Article · · Optics Express
DOI:https://doi.org/10.1364/OE.26.023728· OSTI ID:1467540

Sponsoring Organization:
USDOE
Grant/Contract Number:
NA0003525
OSTI ID:
1467540
Journal Information:
Optics Express, Journal Name: Optics Express Vol. 26 Journal Issue: 18; ISSN 1094-4087
Publisher:
Optical Society of AmericaCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 153 works
Citation information provided by
Web of Science

References (44)

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Characterization of frequency dispersion in Ti‐indiffused lithium niobate optical devices journal September 1987
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110 GHz CMOS compatible thin film LiNbO3 modulator on silicon journal January 2016
Integrated high quality factor lithium niobate microdisk resonators journal January 2014
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Fully packaged, broad-band LiNbO 3 modulator with low drive voltage journal July 2000
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Nanophotonic lithium niobate electro-optic modulators journal January 2018
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40-Gb/s X-cut LiNbO/sub 3/ optical modulator with two-step back-slot structure journal December 2002
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High-Q lithium niobate microdisk resonators on a chip for efficient electro-optic modulation journal January 2015
LiNbO3 thick films grown on sapphire by using a multistep sputtering process journal November 2001
High-speed electrooptic modulator characterization using optical spectrum analysis journal October 2003
Room-temperature bonding of lithium niobate and silicon wafers by argon-beam surface activation journal April 1999
Room temperature bonding of silicon and lithium niobate journal July 2006
Femtojoule electro-optic modulation using a silicon–organic hybrid device journal February 2015

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