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Photonic integration of Er 3+ :Y 2 SiO 5 with thin-film lithium niobate by flip chip bonding

Journal Article · · Optics Express
DOI:https://doi.org/10.1364/OE.423659· OSTI ID:1781896

Rare earth ions are known as promising candidates for building quantum light-matter interface. However, tunable photonic cavity access to rare earth ions in their desired host crystal remains challenging. Here, we demonstrate the integration of erbium doped yttrium orthosilicate (Er 3+ :Y 2 SiO 5 ) with thin-film lithium niobate photonic circuit by plasma-activated direct flip chip bonding. Resonant coupling to erbium ions is realized by on-chip electro-optically tuned high Q lithium niobate micro-ring resonators. Fluorescence and absorption of erbium ions at 1536.48 nm are measured in the waveguides, while the collective ion-cavity cooperativity with micro-ring resonators is assessed to be 0.36. This work presents a versatile scheme for future rare earth ion integrated quantum devices.

Research Organization:
Yale Univ., New Haven, CT (United States)
Sponsoring Organization:
USDOE; USDOE Office of Science (SC)
Grant/Contract Number:
SC0019406
OSTI ID:
1781896
Alternate ID(s):
OSTI ID: 1853217
Journal Information:
Optics Express, Journal Name: Optics Express Journal Issue: 10 Vol. 29; ISSN 1094-4087; ISSN OPEXFF
Publisher:
Optical Society of AmericaCopyright Statement
Country of Publication:
United States
Language:
English

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