PMMA-Assisted Plasma Patterning of Graphene

Bobadilla, Alfredo D.; Ocola, Leonidas E.; Sumant, Anirudha V.; Kaminski, Michael; Seminario, Jorge M.

doi:10.1155/2018/8349626

Title: PMMA-Assisted Plasma Patterning of Graphene

Journal Article · Thu Aug 23 00:00:00 EDT 2018 · Journal of Nanotechnology

DOI:https://doi.org/10.1155/2018/8349626· OSTI ID:1466086

^[1]; Ocola, Leonidas E. ^[2]; Sumant, Anirudha V. ^[2]; Kaminski, Michael ^[3];

^[4]

Faculty of Engineering, Universidad Peruana de Ciencias Aplicadas, Surco, Lima 33, Peru, Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL 60439, USA, Nuclear Engineering Division, Argonne National Laboratory, Argonne, IL 60439, USA, Department of Chemical Engineering, Electrical and Computer Engineering, and Material Sciences and Engineering, Texas A&M University, College Station, TX 77843, USA
Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL 60439, USA
Nuclear Engineering Division, Argonne National Laboratory, Argonne, IL 60439, USA
Department of Chemical Engineering, Electrical and Computer Engineering, and Material Sciences and Engineering, Texas A&M University, College Station, TX 77843, USA

Microelectronic fabrication of Si typically involves high-temperature or high-energy processes. For instance, wafer fabrication, transistor fabrication, and silicidation are all above 500°C. Contrary to that tradition, we believe low-energy processes constitute a better alternative to enable the industrial application of single-molecule devices based on 2D materials. The present work addresses the postsynthesis processing of graphene at unconventional low temperature, low energy, and low pressure in the poly methyl-methacrylate- (PMMA-) assisted transfer of graphene to oxide wafer, in the electron-beam lithography with PMMA, and in the plasma patterning of graphene with a PMMA ribbon mask. During the exposure to the oxygen plasma, unprotected areas of graphene are converted to graphene oxide. The exposure time required to produce the ribbon patterns on graphene is 2 minutes. In conclusion, we produce graphene ribbon patterns with ~50 nm width and integrate them into solid state and liquid gated transistor devices.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1466086

Alternate ID(s):: OSTI ID: 1474154

Journal Information:: Journal of Nanotechnology, Journal Name: Journal of Nanotechnology Vol. 2018; ISSN 1687-9503

Publisher:: Hindawi Publishing CorporationCopyright Statement

Country of Publication:: United Kingdom

Language:: English

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