Interface magnetization transition via minority spin injection

Fang, F.; Zhai, H.; Ma, X.; Yin, Y. W.; Li, Qi; Lüpke, G.

doi:10.1063/1.4972035

Title: Interface magnetization transition via minority spin injection

Journal Article · Wed Dec 07 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4972035· OSTI ID:1465954

^[1]; Zhai, H. ^[1]; Ma, X. ^[1]; Yin, Y. W. ^[2]; Li, Qi ^[2]; Lüpke, G. ^[1]

College of William and Mary, Williamsburg, VA (United States). Department of Applied Science
Pennsylvania State Univ., University Park, PA (United States). Department of Physics

The interface magnetization of n-type BaTiO₃/La_0.7Sr_0.3MnO₃ heterojunction is selectively probed by magnetic second-harmonic generation at 80 K. Additionally, the injection of minority spins at the interface causes a sudden, reversible transition of the spin alignment of interfacial Mn ions from ferromagnetic to antiferromagnetic exchange coupled, while the bulk magnetization remains unchanged. We attribute the emergent interfacial antiferromagnetic interactions to weakening of the double-exchange mechanism caused by the strong Hund’s rule coupling between injected minority spins and local magnetic moments. Lastly, the effect is robust and may serve as a viable route for electronic and spintronic applications.

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Research Organization:: College of William and Mary, Williamsburg, VA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: FG02-04ER46127; FG02-08ER4653

OSTI ID:: 1465954

Alternate ID(s):: OSTI ID: 1334680

Journal Information:: Applied Physics Letters, Vol. 109, Issue 23; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 4 works

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