Iron as a source of efficient Shockley-Read-Hall recombination in GaN

Wickramaratne, Darshana; Shen, Jimmy-Xuan; Dreyer, Cyrus E.; Engel, Manuel; Marsman, Martijn; Kresse, Georg; Marcinkevičius, Saulius; Alkauskas, Audrius; Van de Walle, Chris G.

doi:10.1063/1.4964831

Title: Iron as a source of efficient Shockley-Read-Hall recombination in GaN

Journal Article · Fri Oct 21 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4964831· OSTI ID:1465786

Wickramaratne, Darshana ^[1];

^[2]; Dreyer, Cyrus E. ^[3];

^[4];

^[5]; Alkauskas, Audrius ^[6]; Van de Walle, Chris G. ^[1]

Univ. of California, Santa Barbara, CA (United States). Materials Dept.
Univ. of California, Santa Barbara, CA (United States). Dept. of Physics
Univ. of California, Santa Barbara, CA (United States). Materials Dept.; Rutgers Univ., Piscataway, NJ (United States). Dept. of Physics and Astronomy
Univ. of Vienna (Austria). Faculty of Physics, Computational Materials Physics
KTH Royal Inst. of Technology, Stockholm (Sweden). Dept. of Materials and Nano Physics
Center for Physical Sciences and Technology, Vilnius (Lithuania)

Transition metal impurities are known to adversely affect the efficiency of electronic and optoelectronic devices by introducing midgap defect levels that can act as efficient Shockley-Read-Hall centers. Iron impurities in GaN do not follow this pattern: their defect level is close to the conduction band and hence far from midgap. Here, using hybrid functional first-principles calculations, we uncover the electronic properties of Fe and we demonstrate that its high efficiency as a nonradiative center is due to a recombination cycle involving excited states. Unintentional incorporation of iron impurities at modest concentrations (10¹⁵ cm^–3) leads to nanosecond nonradiative recombination lifetimes, which can be detrimental for the efficiency of electronic and optoelectronic devices.

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Research Organization:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); European Union (EU)

Grant/Contract Number:: SC0010689; AC02-05CH11231; 657054

OSTI ID:: 1465786

Alternate ID(s):: OSTI ID: 1329497

Journal Information:: Applied Physics Letters, Vol. 109, Issue 16; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 51 works

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Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga ₂ O ₃ Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V. Journal of Applied Physics, Vol. 123, Issue 11 https://doi.org/10.1063/1.5025916	journal	March 2018
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