Voltage-Controlled Bistable Thermal Conductivity in Suspended Ferroelectric Thin-Film Membranes

Foley, Brian M.; Wallace, Margeaux; Gaskins, John T.; Paisley, Elizabeth A.; Johnson-Wilke, Raegan L.; Kim, Jong -Woo; Ryan, Philip J.; Trolier-McKinstry, Susan; Hopkins, Patrick E.; Ihlefeld, Jon F.

doi:10.1021/acsami.8b04169

Title: Voltage-Controlled Bistable Thermal Conductivity in Suspended Ferroelectric Thin-Film Membranes

Journal Article · Fri Jul 06 00:00:00 EDT 2018 · ACS Applied Materials and Interfaces

DOI:https://doi.org/10.1021/acsami.8b04169· OSTI ID:1465382

Foley, Brian M. ^[1]; Wallace, Margeaux ^[2]; Gaskins, John T. ^[3]; Paisley, Elizabeth A. ^[4]; Johnson-Wilke, Raegan L. ^[4]; Kim, Jong -Woo ^[5]; Ryan, Philip J. ^[5]; Trolier-McKinstry, Susan ^[6]; Hopkins, Patrick E. ^[3];

^[7]

Univ. of Virginia, Charlottesville, VA (United States); The Pennsylvania State Univ., University Park, PA (United States)
The Pennsylvania State Univ., University Park, PA (United States); General Electric, Niskayuna, NY (United States)
Univ. of Virginia, Charlottesville, VA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Argonne National Lab. (ANL), Lemont, IL (United States)
The Pennsylvania State Univ., University Park, PA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of Virginia, Charlottesville, VA (United States)

Ferroelastic domain walls in ferroelectric materials possess two properties that are known to affect phonon transport: a change in crystallographic orientation and a lattice strain. Changing populations and spacing of nanoscale-spaced ferroelastic domain walls lead to the manipulation of phonon-scattering rates, enabling the control of thermal conduction at ambient temperatures. In the present work, lead zirconate titanate (PZT) thin-film membrane structures were fabricated to reduce mechanical clamping to the substrate and enable a subsequent increase in the ferroelastic domain wall mobility. Under application of an electric field, the thermal conductivity of PZT increases abruptly at similar to 100 kV/cm by similar to 13% owing to a reduction in the number of phonon-scattering domain walls in the thermal conduction path. The thermal conductivity modulation is rapid, repeatable, and discrete, resulting in a bistable state or a "digital" modulation scheme. The modulation of thermal conductivity due to changes in domain wall configuration is supported by polarization-field, mechanical stiffness, and in situ microdiffraction experiments. This work opens a path toward a new means to control phonons and phonon-mediated energy in a digital manner at room temperature using only an electric field.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC); National Science Foundation (NSF); Air Force Research Laboratory (AFRL), Air Force Office of Scientific Research (AFOSR)

Grant/Contract Number:: AC04-94AL85000; AC02-06CH11357

OSTI ID:: 1465382

Alternate ID(s):: OSTI ID: 1481749

Report Number(s):: SAND-2018-8415J; 666627

Journal Information:: ACS Applied Materials and Interfaces, Vol. 10, Issue 30; ISSN 1944-8244

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 25 works

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Title: Voltage-Controlled Bistable Thermal Conductivity in Suspended Ferroelectric Thin-Film Membranes

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