Voltage-Controlled Bistable Thermal Conductivity in Suspended Ferroelectric Thin-Film Membranes
Journal Article
·
· ACS Applied Materials and Interfaces
- Univ. of Virginia, Charlottesville, VA (United States); The Pennsylvania State Univ., University Park, PA (United States)
- The Pennsylvania State Univ., University Park, PA (United States); General Electric, Niskayuna, NY (United States)
- Univ. of Virginia, Charlottesville, VA (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Argonne National Lab. (ANL), Lemont, IL (United States)
- The Pennsylvania State Univ., University Park, PA (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of Virginia, Charlottesville, VA (United States)
Ferroelastic domain walls in ferroelectric materials possess two properties that are known to affect phonon transport: a change in crystallographic orientation and a lattice strain. Changing populations and spacing of nanoscale-spaced ferroelastic domain walls lead to the manipulation of phonon-scattering rates, enabling the control of thermal conduction at ambient temperatures. In the present work, lead zirconate titanate (PZT) thin-film membrane structures were fabricated to reduce mechanical clamping to the substrate and enable a subsequent increase in the ferroelastic domain wall mobility. Under application of an electric field, the thermal conductivity of PZT increases abruptly at ~100 kV/cm by ~13% owing to a reduction in the number of phonon-scattering domain walls in the thermal conduction path. The thermal conductivity modulation is rapid, repeatable, and discrete, resulting in a bistable state or a “digital” modulation scheme. The modulation of thermal conductivity due to changes in domain wall configuration is supported by polarization-field, mechanical stiffness, and in situ microdiffraction experiments. In conclusion, this work opens a path toward a new means to control phonons and phonon-mediated energy in a digital manner at room temperature using only an electric field.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States); Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- Air Force Research Laboratory (AFRL), Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF); USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC)
- Grant/Contract Number:
- AC02-06CH11357; AC04-94AL85000
- OSTI ID:
- 1465382
- Alternate ID(s):
- OSTI ID: 1481749
- Report Number(s):
- SAND--2018-8415J; 666627
- Journal Information:
- ACS Applied Materials and Interfaces, Journal Name: ACS Applied Materials and Interfaces Journal Issue: 30 Vol. 10; ISSN 1944-8244
- Publisher:
- American Chemical Society (ACS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Thermal conductivity in self-assembled CoFe 2 O 4 /BiFeO 3 vertical nanocomposite films
|
journal | November 2018 |
Similar Records
Deterministic Ferroelastic Domain Switching Using Ferroelectric Bilayers
Nanoscale Origins of Ferroelastic Domain Wall Mobility in Ferroelectric Multilayers
Journal Article
·
Tue Jul 02 20:00:00 EDT 2019
· Nano Letters
·
OSTI ID:1566820
Nanoscale Origins of Ferroelastic Domain Wall Mobility in Ferroelectric Multilayers
Journal Article
·
Sun Oct 30 20:00:00 EDT 2016
· ACS Nano
·
OSTI ID:1336210