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A QUANTITATIVE METHOD FOR MEASURING REMAINING SILICON THICKNESS DURING XEF2 FIB TRENCHING FOR BACKSIDE CIRCUIT OPERATIONS.

Conference ·
OSTI ID:1465073
; ; ; ; ;  [1];  [1];
  1. Varioscale
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Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1465073
Report Number(s):
SAND2017-8633C; 656202
Country of Publication:
United States
Language:
English

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